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參數(shù)資料
| 型號： | M30L0R8000B0ZAQE |
| 廠商： | 意法半導體 |
| 英文描述： | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| 中文描述： | 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 21/83頁 |
| 文件大?。?/td> | 1363K |
| 代理商： | M30L0R8000B0ZAQE |
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M30L0R8000T0, M30L0R8000B0
Table 6. Factory Program Command
Note: 1. WA = Word Address in targeted bank, BKA= Bank Address, PD = Program Data, BA = Block Address, X = Don’t Care.
2. WA
1
is the Start Address, NOT BA
1
= Not Block Address of WA
1
.
3. The Program/Verify phase can be executed any number of times as long as the data is to be programmed to the same block.
4. Any address within the bank can be used.
Table 7. Electronic Signature Codes
Note: CR = Configuration Register, PRLD = Protection Register Lock Data.
Command
Phase
C
Bus Write Operations
1st
2nd
3rd
Final -1
Final
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Buffer
Enhanced
Factory
Program
Setup
2
BKA or
WA
(4)
80h
WA
1
D0h
Program/
Verify
(3))
≥
32
WA
1
PD
1
WA
1
PD
2
WA
1
PD
3
WA
1
PD
31
WA
1
PD
32
Exit
1
NOT
BA
1(2)
X
Code
Address (h)
Data (h)
Manufacturer Code
Bank Address + 00
0020
Device Code
Top
Bank Address + 01
880D
Bottom
Bank Address + 01
880E
Block Protection
Locked
Block Address + 02
0001
Unlocked
0000
Locked and Locked-Down
0003
Unlocked and Locked-Down
0002
Configuration Register
Bank Address + 05
CR
Protection Register PR0
Lock
ST Factory Default
Bank Address + 80
0002
OTP Area Permanently Locked
0000
Protection Register PR0
Bank Address + 81
Bank Address + 84
Unique Device
Number
Bank Address + 85
Bank Address + 88
OTP Area
Protection Register PR1 through PR16 Lock
Bank Address + 89
PRLD
Protection Registers PR1-PR16
Bank Address + 8A
Bank Address + 109
OTP Area
相關PDF資料 |
PDF描述 |
|---|---|
| M30L0R8000B0ZAQF | CAP 0.1UF 50V 10% X7R DIP-2 BULK S-MIL-C-39014 |
| M30L0R8000B0ZAQT | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQ | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0 | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0 | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R8000B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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