參數(shù)資料
型號： M30L0R7000B0ZAQF
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
中文描述： 128兆位（8兆x16插槽，多銀行，多層次，多突發(fā)），1.8V電源快閃記憶體
文件頁數(shù)： 78/83頁
文件大?。?/td> 1329K
代理商： M30L0R7000B0ZAQF
M30L0R7000T0, M30L0R7000B0
78/83
Note: 1. CI = Command Interface, CR = Configuration Register, BEFP = Buffer Enhanced Factory Program, P/E. C. = Program/Erase Con-
troller.
2. At Power-Up, all banks are in Read Array mode. Issuing a Read Array command to a busy bank, results in undetermined data out-
put.
3. The two cycle command should be issued to the same bank address.
4. If the P/E.C. is active, both cycles are ignored.
5. The Clear Status Register command clears the Status Register error bits except when the P/E.C. is busy or suspended.
6. BEFP is allowed only when Status Register bit SR0 is set to ‘0’. BEFP is busy if Block Address is first BEFP Address. Any other
commands are treated as data.
Buffer
Program
in Erase
Suspend
Setup
Buffer Program Load 1 in Erase Suspend (give word count load (N-1)); if N=0 go to Buffer Program confirm. Else (N
not =0) go to Buffer Program Load 2
Buffer
Load 1
Buffer
Load 2
Buffer Program Load 2 in Erase Suspend (data load)
Buffer Program Confirm in Erase Suspend when count =0; Else Buffer Program Load 2 in Erase Suspend (note:
Buffer Program will fail at this point if any block address is different from the first address)
Buffer Program
Busy in Erase
Suspend
Confirm
Ready (error)
Ready (error)
Busy
Buffer Program Busy in Erase Suspend
Buffer
Program
Suspend in
Erase
Suspend
Buffer Program Busy in Erase
Suspend
Suspend
Buffer Program Suspend in Erase Suspend
Buffer Program
Busy in Erase
Suspend
Buffer Program Suspend in Erase Suspend
Lock/CR Setup
in Erase Suspend
Erase Suspend (Lock Error)
Erase Suspend
Erase Suspend (Lock Error)
Buffer
EFP
Setup
Busy
Ready (error)
BEFP Busy
BEFP Busy
(6)
Ready (error)
Current CI State
Command Input
Erase Confirm
P/E Resume,
Block Unlock
confirm,
BEFP Confirm
Read
Array
(2)
(FFh)
Program
Setup
(3,4)
(10/40h)
Buffer
Program
(3,4)
(E8h)
Block
Erase,
Setup
(3,4)
(20h)
BEFP
Setup
(80h)
(3,4)
(D0h)
Buffer
Program,
Program/
Erase
Suspend
(B0h)
Read
Status
Register
(70h)
Clear
status
Register
(5)
(50h)
Read
Electronic
Signature,
Read CFI
Query
(90h, 98h)
相關(guān)PDF資料
PDF描述
M30L0R7000T0ZAQE AB 35C 7#12,28#16 PIN RECP
M30L0R7000T0ZAQF CAP 0.1UF 50V 10% X7R DIP-2 BULK R-MIL-C-39014
M30L0R7000T0ZAQT CAP 0.22UF 50V 20% X7R DIP-2 BULK R-MIL-C-39014
M30L0R7000B0ZAQT CAP 0.047UF 100V 20% X7R DIP-2 BULK R-MIL-C-39014
M30L0R8000T0ZAQ 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R7000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
M30L0R7000T0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
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