參數(shù)資料
型號： M308B8SGP
元件分類： 微控制器/微處理器
英文描述： 32-BIT, 32 MHz, MICROCONTROLLER, PQFP144
封裝： 20 X 20 MM, 0.50 MM PITCH, PLASTIC, LQFP-144
文件頁數(shù)： 30/69頁
文件大小： 1119K
代理商： M308B8SGP
M32C/8B Group
5. Electrical Characteristics
REJ03B0242-0100 Rev.1.00 Nov 01, 2009
Page 36 of 67
Table 5.4
Recommended Operating Conditions (3/3)
(VCC1 = VCC2 = 3.0 to 5.5 V, Topr = -20 to 85
°C unless otherwise specified)
Table 5.5
Flash Memory Electrical Characteristics (VCC1 = VCC2 = 3.0 V to 5.5 V,
Topr = 0 to 60
°C unless otherwise specified)
NOTES:
1. If erase and program endurance is n times (n = 100), each block can be erased n times. For example, if a 4-
Kbyte block A is erased after programming four-byte data 1,024 times, each to a different address, this counts
as one erase and program time. Data cannot be programmed to the same address more than once without
erasing the block (rewrite prohibited).
2. Prior to accessing registers FMR0 to FMR3 or to entering CPU rewrite mode (EW0, EW1 mode), set the CPU
clock frequency to 10 MHz or lower using bits MCD4 to MCD0 in the MCD register, and also set the PM12 bit in
the PM1 register to 1 (1 wait state).
Symbol
Parameter
Standard
Unit
Min.
Typ.
Max.
f(CPU)
CPU clock frequency
(same frequency as f(BCLK))
VCC1 = 3.0 to 5.5V
0
32
MHz
f(XIN)
Main clock input frequency
VCC1 = 3.0 to 5.5V
0
16
MHz
f(XCIN)
Sub clock frequency
32.768
50
kHz
f(Ring)
On-chip oscillator frequency
0.5
1
2
MHz
f(PLL)
PLL clock frequency
VCC1 = 3.0 to 5.5V
10
32
MHz
tsu(PLL)
Wait time to stabilize PLL frequency
synthesizer
VCC1 = 5.0V
20
ms
VCC1 = 3.3V
50
ms
Symbol
Parameter
Measurement Condition
Standard
Unit
Min.
Typ.
Max.
CPU clock frequency (in CPU rewrite mode)(2)
10
MHz
Erase and program endurance(1)
100
times
Program time (4 bytes) (Topr = 25
°C)
Other than Data flash
150
900
μs
Data flash
300
1700
Lock bit program time
Other than Data flash
70
500
μs
Data flash
140
1000
Block erase time (Topr = 25
°C)
4-Kbyte block
0.2
3
s
8-Kbyte block
0.2
3
s
64-Kbyte block
0.2
3
s
tps
Wait time to stabilize flash memory circuit
50
μs
Data hold time (Topr = -40 to 85
°C)
10
years
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