Description (Flash Memory Version)
Mitsubishi microcomputers
M16C / 62 Group
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
234
Item
Power supply voltage
Program/erase voltage
Flash memory operation mode
Erase block
division
Program method
Erase method
Program/erase control method
Protect method
Number of commands
Program/erase count
ROM code protect
Performance
5V version: 2.7V to 5.5 V
(f(X
IN
)=16MHz, without wait, 4.2V to 5.5V,
f(X
IN
)=10MHz, with one wait, 2.7V to 5.5V)
3V version: 2.4V to 3.6 V
(f(X
IN
)=10MHz, without wait, 2.7V to 3.6V,
f(X
IN
)=7MHz, without wait, 2.4V to 3.6V)
5V version: 4.2V to 5.5 V
(f(X
IN
)=12.5MHz, with one wait,
f(X
IN
)=6.25MHz, without wait)
3V version: 2.7V to 3.6 V
(f(X
IN
)=10MHz, with one wait,
f(X
IN
)=6.25MHz, without wait)
Three modes (parallel I/O, standard serial I/O, CPU rewrite)
See Figure 1.28.1
One division (8 Kbytes) (Note 1)
In units of pages (in units of 256 bytes)
Collective erase/block erase
Program/erase control by software command
Protected for each block by lock bit
8 commands
100 times
Parallel I/O and standard serial modes are supported.
Note1: The boot ROM area contains a standard serial I/O mode control program which is stored in it when shipped from the factory.
This area can be erased and programmed in only parallel I/O mode.
Note2: Refer to recommended operating conditions about 5 V version. 3V version relationship between main clock oscillation
frequency and supply voltage are as follows.
Main clock input oscillation frequency
(flash memory 3V version, without wait)
10 X V
CC
- 17MH
Z
User ROM area
Boot ROM area
3V version main clock input
oscillation frequency(Max.)
(Note2)
3V version power supply
current (Notes 3, 4)
10MHz (V
CC
=2.7V to 3.6V,without wait)
10 X V
CC
- 17 MHz (V
CC
=2.4V to 2.7V,without wait)
12.0mA(Typ.), 21.25mA(Max.) (V
CC
=3V, f(X
IN
)=10MHz, square wave, no division, without wait)
40μA(Typ.) (V
CC
=3V, f(X
CIN
)=32kHz, square wave, without wait) [operate in RAM]
Note3: Refer to electric characteristic about 5V version.
Note4: A standard value in stop and wait modes do not depend on a kind of memory to have built-in and is the same class. Refer to
electric characteristic in V
CC
=3V.
AAAAAA
2.4
2.7
AAAAAA
AAAAAA
AAAAAA
AAAAAA
10.0
7.0
0.0
3.6
O
f
Z
]
Supply voltage
[V] (BCLK: no division)
700μA(Typ.) (V
CC
=3V, f(X
CIN
)=32kHz, square wave, without wait) [operate in flash memory]
Table 1.28.1. Outline Performance of the M16C/62 (flash memory version)
Outline Performance
Table 1.28.1 shows the outline performance of the M16C/62 (flash memory version) and Table 1.28.2
shows the power supply current( Typ.).
5V power supply current(5V version)
f(X
IN
)=16MHz, without wait, No division
35mA
28mA
25mA
Remark
Division by 4 in program/erase
3V power supply current(5V version)
f(X
IN
)=10MHz, with wait, No division
13.5mA
-
3V power supply current(3V version)
f(X
IN
)=10MHz, without wait, No division
12mA
17mA
14mA
-
Parameter
Measuring condition
Standard (Typ.)
Read
Program
Erase
Division by 2 in program/erase
Table 1.28.2. Power supply current (typ.) of the M16C/62 (flash memory version)