參數(shù)資料
型號: M30201M4T
廠商: Mitsubishi Electric Corporation
英文描述: SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
中文描述: 單片16位CMOS微機
文件頁數(shù): 140/159頁
文件大?。?/td> 2319K
代理商: M30201M4T
Appendix Parallel I/O Mode
Peimnay
Unde
deeopmen
Mitsubishi microcomputers
M30201 Group
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
140
Program-verify command (C0
16
)
The program-verify mode is entered by writing the command code “C0
16
” in the first bus cycle and the
verify data is output from the data I/O pins (D
0
–D
7
) in the second bus cycle.
Erase command (20
16
+ 20
16
)
The flash memory control circuit executes an erase operation by writing command code “20
16
” in the
first bus cycle and the same command code again in the second bus cycle. The erase operation
requires approximately 20 ms. Wait for 20 ms or more before the user go to the next processing.
Before this erase command can be performed, all memory locations to be erased must have had data
“00
16
” written to by using the program and program-verify commands.
Note 1: The erase operation is not completed immediately by writing an erase command once. The
user must always execute an erase-verify command after each erase command executed. And if
verification fails, the user need to execute the erase command repeatedly until the verification passes.
See Figure CC-4 for an example of an erase flowchart.
Erase-verify command (A0
16
)
The erase-verify mode is entered by writing the command code “A0
16
” in the first bus cycle and the
verify data is output from the data I/O pins (D
0
–D
7
) in the second bus cycle.
Note 1: If any unerased memory location is encountered during erase-verify operation, be sure to
execute erase and erase-verify operations one more time. In this case, however, the user does not
need to write data “00
16
” to memory before erasing.
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