參數(shù)資料
型號(hào): M2V64S40DTP-8
廠商: Mitsubishi Electric Corporation
英文描述: 64M Synchronous DRAM
中文描述: 6400同步DRAM
文件頁數(shù): 44/52頁
文件大?。?/td> 674K
代理商: M2V64S40DTP-8
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
A
0-9 *
A
10
DQM(U/L)
A
11
Apr. '99
SDRAM (Rev.1.2)
M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 1048576-WORD x 16-BIT)
64M bit Synchronous DRAM
* A9 (x8) and A8,A9 (x16) for column address of read/write are don't care
44
Read Interrupted by Precharge @BL=4 CL=3
/CS
/RAS
/CAS
/WE
CKE
BA0,1
DQ
X
X
X
0
Y
0
Q0
Q0
Q0
ACT#0
READ#0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
tRCD
Y
1
PRE#1
CLK
X
X
X
1
tRRD
Q1
Q1
ACT#1
PRE#0
Q0
DQM read latency=2
1
Y
1
Burst Read is not interrupted
by Precharge of the other bank.
0
X
X
X
1
tRCD
tRP
READ#1
ACT#1
READ#1
Burst Read is interrupted
by Precharge of the same bank.
Italic parameter
indicates minimum case
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