參數(shù)資料
型號: M2V56S20ATP-6
廠商: Mitsubishi Electric Corporation
英文描述: 256M Synchronous DRAM
中文描述: 256M同步DRAM
文件頁數(shù): 48/49頁
文件大小: 244K
代理商: M2V56S20ATP-6
Feb.2000
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
SDRAM (Rev.1.1)
Single Data Rate
M2V56S20/ 30/ 40/ TP -6, -7, -8
256M Synchronous DRAM
48
- Remove "Power-Down" from Function Truth Table for CKE Note 2
- Modify Average Supply Current from Vdd
Icc2N, Icc3N Test Condition (/CS
VIHmin)
Icc3PS Limits (from 3mA to 4mA)
Icc5 Limits (from 160/150mA to 180/170mA)
Icc6 Test Condition (CKE
0.2V)
Icc6 Limits (from 2mA to 3mA)
- Change Switching Characteristics tAC of -8 for CL=2 from 6ns to 7ns
- Add Note to Switching Characteristics
- Change Output Load Condition to 50pF only
- Remove tCCD from AC Timing Requirements
Feb. / '00
1.1
1st edition
July / '99
1.0
Description
Date
Rev.
Revison History
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M2V56S20AKT-5 Circular Connector; No. of Contacts:13; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:10-35 RoHS Compliant: No
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M2V56S20TP-6 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S20TP-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM