參數(shù)資料
型號： M2V56D40ATP-75AL
廠商： Mitsubishi Electric Corporation
英文描述： 256M Double Data Rate Synchronous DRAM
中文描述： 256M雙數(shù)據(jù)速率同步DRAM
文件頁數(shù)： 23/40頁
文件大?。?/td> 768K
代理商： M2V56D40ATP-75AL
23
MITSUBISHI ELECTRIC
Mar. '02
MITSUBISHI LSIs
DDR SDRAM
(Rev.1.44)
M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10
M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10
256M Double Data Rate Synchronous DRAM
Note (Continued) :
20. IDD7 : Operating current is measured under the conditions
(1).Four Bank are being interleaved with tRC(min),burst mode,address and control inputs on NOP edge
are not changing.Iout = 0mA
(2).Timing Patterns
-DDR200(-10) (100MHz,CL=2) : tCK=10ns, CL=2, BL=4, tRRD=2*tCK, tRCD=3*tCK,
Read with autoprecharge
Setup:A0 N A1 R0 A2 R1 A3 R2
Read :A0 R3 A1 R0 A2 R1 A3 R2 -repeat the same timing with random address changing
50% of data changing at every transfer
-DDR266B(-75) (133MHz,CL=2.5) : tCK=7.5ns, CL=2.5, BL=4, tRRD=2*tCK, tRCD=3*tCK,
Read with autoprecharge
Setup:A0 N A1 R0 A2 R1 A3 R2 N R3
Read :A0 N A1 R0 A2 R1 A3 R2 N R3 -repeat the same timing with random address changing
50% of data changing at every transfer
-DDR266A(-75A) (133MHz,CL=2) : tCK=7.5ns, CL=2, BL=4, tRRD=2*tCK, tRCD=3*tCK,
Read with autoprecharge
Setup: A0 N A1 R0 A2 R1 A3 R2 N R3
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 -repeat the same timing with random address changing
50% of data changing at every transfer
*Legend: A=Activate,R=Read, P=Precharge, N=NOP
21. Low Power Version (-75AL/-75L/-10L)
相關(guān)PDF資料
PDF描述
M2V56D40ATP-75L 256M Double Data Rate Synchronous DRAM
M2V56D40ATP75A 256M Double Data Rate Synchronous DRAM
M2S56D20ATP-10L 256M Double Data Rate Synchronous DRAM
M2S56D20ATP-75 256M Double Data Rate Synchronous DRAM
M2S56D20ATP-75A 256M Double Data Rate Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M2V56D40ATP-75L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2V56S20AKT 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S20AKT-5 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S20AKT-6 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S20AKT-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
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