參數資料
型號: M2V56D40ATP-75
廠商: Mitsubishi Electric Corporation
英文描述: 256M Double Data Rate Synchronous DRAM
中文描述: 256M雙數據速率同步DRAM
文件頁數: 20/40頁
文件大小: 768K
代理商: M2V56D40ATP-75
20
MITSUBISHI ELECTRIC
Mar. '02
MITSUBISHI LSIs
DDR SDRAM
(Rev.1.44)
M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10
M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10
256M Double Data Rate Synchronous DRAM
AC TIMING REQUIREMENTS
(Ta=0 ~ 70
o
C, VDD = VDDQ = 2.5V +0.2V, VSS = VSSQ = 0V, unless otherwise noted)
Min.
-0.75
Max
0.75
Min.
-0.75
Max
0.75
Min.
-0.8
Max
0.8
tAC
DQ Output Valid data delay time from CLK//CLK
ns
tDQSCK DQ Output Valid data delay time from CLK//CLK
-0.75
0.75
-0.75
0.75
-0.8
0.8
ns
tCH
CLK High level width
0.45
0.55
0.45
0.55
0.45
0.55
tCK
tCL
CLK Low level width
0.45
0.55
0.45
0.55
0.45
0.55
tCK
CL=2.5
7.5
15
7.5
15
8
15
ns
CL=2
7.5
15
10
15
10
15
ns
tDS
Input Setup time (DQ,DM)
0.5
0.5
0.6
ns
tDH
Input Hold time(DQ,DM)
0.5
0.5
0.6
ns
tDIPW
DQ and DM input pulse width (for each input)
1.75
1.75
2
ns
tHZ
Data-out-high impedance time from CLK//CLK
-0.75
0.75
-0.75
0.75
-0.8
0.8
ns
14
tLZ
Data-out-low impedance time from CLK//CLK
-0.75
0.75
-0.75
0.75
-0.8
0.8
ns
14
tDQSQ DQ Valid data delay time from DQS
0.5
0.5
0.6
ns
tHP
Clock half period
tCLmin
or
tCHmin
tCLmin
or
tCHmin
tCLmin
or
tCHmin
ns
tQH
Output DQS valid window
tHP-0.75
tHP-0.75
tHP-1.0
ns
tDQSS Write command to first DQS latching transition
0.75
1.25
0.75
1.25
0.75
1.25
tCK
tDQSH DQS input High level width
0.35
0.35
0.35
tCK
tDQSL DQS input Low level width
0.35
0.35
0.35
tCK
tDSS
DQS falling edge to CLK setup time
0.2
0.2
0.2
tCK
tDSH
DQS falling edge hold time from CLK
0.2
0.2
0.2
tCK
tMRD
Mode Register Set command cycle time
15
15
15
ns
tWPRES Write preamble setup time
0
0
0
ns
16
tWPST Write postamble
0.4
0.6
0.4
0.6
0.4
0.6
tCK
15
tWPRE Write preamble
0.25
0.25
0.25
tCK
tIS
Input Setup time (address and control)
0.9
0.9
1.1
ns
19
tIH
Input Hold time (address and control)
0.9
0.9
1.1
ns
19
tRPST Read postamble
0.4
0.6
0.4
0.6
0.4
0.6
tCK
tRPRE
Read preamble
0.9
1.1
0.9
1.1
0.9
1.1
tCK
-10
Unit
Notes
tCK
CLK cycle time
Symbol
AC Characteristics Parameter
-75A
-75
相關PDF資料
PDF描述
M2V56D40ATP-75A 256M Double Data Rate Synchronous DRAM
M2V56D40ATP-75AL 256M Double Data Rate Synchronous DRAM
M2V56D40ATP-75L 256M Double Data Rate Synchronous DRAM
M2V56D40ATP75A 256M Double Data Rate Synchronous DRAM
M2S56D20ATP-10L 256M Double Data Rate Synchronous DRAM
相關代理商/技術參數
參數描述
M2V56D40ATP75A 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2V56D40ATP-75A 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2V56D40ATP-75AL 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2V56D40ATP-75L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2V56S20AKT 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM