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參數(shù)資料
| 型號： | M2V56D40AKT-75A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 256M Double Data Rate Synchronous DRAM |
| 中文描述： | 256M雙數(shù)據(jù)速率同步DRAM |
| 文件頁數(shù)： | 12/40頁 |
| 文件大?。?/td> | 768K |
| 代理商： | M2V56D40AKT-75A |
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12
MITSUBISHI ELECTRIC
Mar. '02
MITSUBISHI LSIs
DDR SDRAM
(Rev.1.44)
M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10
M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10
256M Double Data Rate Synchronous DRAM
FUNCTION TRUTH TABLE (continued)
ABBREVIATIONS:
H=High Level, L=Low Level, X=Don't Care
BA=Bank Address, RA=Row Address, CA=Column Address, NOP=No Operation
NOTES:
1. All entries are valid only when CKE was High during the preceding clock cycle and the current clock cycle.
2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending on the
state of specific bank.
3. Must satisfy bus contention, bus turn around, write recovery requirements.
4. NOP to bank precharging or in idle state. May precharge bank indicated by BA.
5. ILLEGAL if any bank is not idle.
6. Refer to Read with Auto-Precharge in page 27.
7. Refer to Write with Auto-Precharge in page 29.
ILLEGAL = Device operation and/or data-integrity are not guaranteed.
Current State /CS /RAS /CAS /WE Address
REFRESHING
H
X
L
H
L
H
L
H
L
L
L
L
L
L
Command
DESEL
NOP
TERM
READ / WRITE
ACT
PRE / PREA
REFA
Action
NOP (Idle after tRFC)
NOP (Idle after tRFC)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
Notes
X
H
H
L
H
H
L
X
H
L
X
H
L
H
X
X
BA
BA, CA, A10
BA, RA
BA, A10
X
Op-Code,
Mode-Add
X
X
BA
BA, CA, A10
BA, RA
BA, A10
X
Op-Code,
Mode-Add
L
L
L
L
MRS
ILLEGAL
H
L
L
L
L
L
L
X
H
H
H
L
L
L
X
H
H
L
H
H
L
X
H
L
X
H
L
H
DESEL
NOP
TERM
READ / WRITE
ACT
PRE / PREA
REFA
NOP (Idle after tMRD)
NOP (Idle after tMRD)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
L
L
L
L
MRS
ILLEGAL
MODE
REGISTER
SETTING
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M2V56D40AKT-75AL | 256M Double Data Rate Synchronous DRAM |
| M2V56D40AKT-75L | 256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP-10 | 256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP-10L | 256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP-75 | 256M Double Data Rate Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M2V56D40AKT-75AL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2V56D40AKT-75L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP-10L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2V56D40ATP-75 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
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