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參數(shù)資料
| 型號(hào)： | M2V56D30AKT-75A |
| 廠商： | Mitsubishi Electric Corporation |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; No. of Contacts:5; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:10-5 RoHS Compliant: No |
| 中文描述： | 256M雙數(shù)據(jù)速率同步DRAM |
| 文件頁數(shù)： | 30/40頁 |
| 文件大?。?/td> | 768K |
| 代理商： | M2V56D30AKT-75A |
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30
MITSUBISHI ELECTRIC
Mar. '02
MITSUBISHI LSIs
DDR SDRAM
(Rev.1.44)
M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10
M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10
256M Double Data Rate Synchronous DRAM
BURST INTERRUPTION
[Read Interrupted by Read]
Burst read operation can be interrupted by the new Read command issued to any other bank.
Random column access is allowed. READ to READ interval is 1CLK as the minimum.
Read Interrupted by Read (BL=8, CL=2)
Command
A0-9,11
A10
BA0,1
DQ
Yi
READ READ
READ
READ
Yj
Yk
Yl
0
0
0
0
00
10
00
01
DQS
Qai0 Qai1 Qaj0 Qaj1
Qaj2 Qaj3 Qak0 Qak1 Qak2 Qak3 Qak4 Qak5 Qal0 Qal1 Qal2
Qal3 Qal4 Qal5 Qal6 Qal7
/CLK
CLK
[Read Interrupted by precharge]
Burst read operation can be interrupted by precharge of the same bank. READ to PRE interval is 1 CLK
minimum. The time between PRE command to output disable is equal to the CAS Latency. As a result,
READ to PRE interval determines valid data length to be outputted. The figure below shows the examples of
BL=8.
Read Interrupted by Precharge (BL=8)
CL=2.5
Command
DQS
Command
DQ
Command
DQ
Q0
Q1
Q2
Q3
Q0
Q1
/CLK
CLK
DQ
Q0
Q1
Q2
Q3
Q4
Q5
PRE
READ
READ
PRE
READ PRE
DQS
DQS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M2V56D20TP-75 | 128 x 64 pixel format, LED Backlight available |
| M2S56D20TP-75 | 128 x 64 pixel format, LED Backlight available |
| M2V56S20TP-6 | 128 x 64 pixel format, LED Backlight available |
| M2V56S30TP-6 | 128 x 64 pixel format, LED Backlight available |
| M2V56S40TP-6 | 128 x 64 pixel format, LED Backlight available |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M2V56D30AKT-75AL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2V56D30AKT-75L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2V56D30ATP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2V56D30ATP-10L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2V56D30ATP-75 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
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