參數(shù)資料
型號： M2S56D40ATP-75A
廠商： Mitsubishi Electric Corporation
英文描述： 256M Double Data Rate Synchronous DRAM
中文描述： 256M雙數(shù)據(jù)速率同步DRAM
文件頁數(shù)： 1/40頁
文件大小： 768K
代理商： M2S56D40ATP-75A
1
MITSUBISHI ELECTRIC
Mar. '02
MITSUBISHI LSIs
DDR SDRAM
(Rev.1.44)
M2S56D20/ 30/ 40ATP -75AL, -75A, -75L, -75, -10L, -10
M2S56D20/ 30/ 40AKT -75AL, -75A, -75L, -75, -10L, -10
256M Double Data Rate Synchronous DRAM
Contents are subject to change without notice.
DESCRIPTION
M2S56D20ATP / AKT is a 4-bank x 16777216-word x 4-bit,
M2S56D30ATP / AKT is a 4-bank x 8388608-word x 8-bit,
M2S56D40ATP/ AKT is a 4-bank x 4194304-word x 16-bit,
double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are
referenced to the rising edge of CLK.Input data is registered on both edges of data strobes, and output
data and data strobe are referenced on both edges of CLK. The M2S56D20/30/40ATP achieve very high
speed data rate up to 133MHz, and are suitable for main memory in computer systems.
FEATURES
- VDD=VDDQ=2.5V+0.2V
- Double data rate architecture; two data transfers per clock cycle
- Bidirectional, data strobe (DQS) is transmitted/received with data
- Differential clock inputs (CLK and /CLK)
- DLL aligns DQ and DQS transitions
- Commands are entered on each positive CLK edge
- Data and data mask are referenced to both edges of DQS
- 4-bank operations are controlled by BA0, BA1 (Bank Address)
- /CAS latency- 2.0/2.5 (programmable)
- Burst length- 2/4/8 (programmable)
- Burst type- sequential / interleave (programmable)
- Auto precharge / All bank precharge is controlled by A10
- 8192 refresh cycles /64ms (4 banks concurrent refresh)
- Auto refresh and Self refresh
- Row address A0-12 / Column address A0-9,11(x4)/ A0-9(x8)/ A0-8(x16)
- SSTL_2 Interface
- Both 66-pin TSOP Package and 64-pin Small TSOP Package
M2S56D*0ATP: 0.8mm lead pitch 66-pin TSOP Package
M2S56D*0AKT: 0.4mm lead pitch 64-pin Small TSOP Package
- JEDEC standard
- Low Power for the Self Refresh Current ICC6 : 2mA (-75AL , -75L , -10L)
Operating Frequencies
* CL = CAS(Read) Latency
Standard
DDR200
DDR266B
DDR266A
133MHz
133MHz
100MHz
100MHz
125MHz
133MHz
M2S56D20/30/40ATP/AKT-10L/-10
M2S56D20/30/40ATP/AKT-75L/-75
M2S56D20/30/40ATP/AKT-75AL/-75A
Max. Frequency
@CL=2.5 *
Max. Frequency
@CL=2.0 *
相關(guān)PDF資料
PDF描述
M2S56D40ATP-75AL 256M Double Data Rate Synchronous DRAM
M2S56D40ATP-75L 256M Double Data Rate Synchronous DRAM
M2S56D40ATP75A 256M Double Data Rate Synchronous DRAM
M2V56D30AKT-10L Circular Connector; No. of Contacts:100; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:22-35 RoHS Compliant: No
M2S56D30AKT-10L Circular Connector; No. of Contacts:3; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:8; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:8-98 RoHS Compliant: No
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M2S56D40ATP-75AL 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M2S56D40ATP-75L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM
M-2-SA 制造商:Excelta Corporation 功能描述:THREE STAR MINITURE TWEEZER 3-1/2 " 制造商:Excelta Corporation 功能描述:THREE STAR MINITURE TWEEZER, 3-1/2 "; Tweezer Type:Straight; Overall Length:3.5"; Tweezer Body Material:Stainless Steel; Tweezer Tip Material:Stainless Steel ;RoHS Compliant: NA
M2SA5802 制造商:Omron Electronic Components LLC 功能描述:RED SCREEN - Bulk 制造商:Omron Electronic Components LLC 功能描述:HEAVY DUTY SWITCHES RED SCREEN
M2SA-5802 功能描述:RED SCREEN RoHS:是 類別:未定義的類別 >> 其它 系列:* 標準包裝:1 系列:* 其它名稱:MS305720A
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