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參數(shù)資料
| 型號： | M2S12D20TP-10 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 128 x 64 pixel format, LED Backlight available |
| 中文描述： | 512M雙數(shù)據(jù)速率同步DRAM |
| 文件頁數(shù)： | 20/38頁 |
| 文件大?。?/td> | 754K |
| 代理商： | M2S12D20TP-10 |
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MITSUBISHI
ELECTRIC
-20-
M2S12D20/ 30TP -75, -75L, -10, -10L
512M Double Data Rate Synchronous DRAM
Feb. '02
MITSUBISHI LSIs
DDR SDRAM (Rev.1.1)
MITSUBISHI ELECTRIC
Notes
1. All voltages are referenced to Vss.
2. Tests for AC timing, IDD, and electrical AC and DC characteristics, may be conducted at nominal reference/supply
voltage levels, However, the specifications and device operations are guaranteed for the full voltage range specified.
3. AC timing and IDD tests may use the VIL to VIH swing of up to 1.5V in the test environment. Input timing is still
referenced to VREF (or to the crossing point for CK//CK), and parameter specifications are guaranteed for the specified
AC input levels under normal use conditions. The minimum slew rate for the input signals is 1V/ns in the range between
VIL(AC) and VIH(AC).
4. The AC and DC input level specifications are as defined in the SSTL_2 Standard (i.e. the receiver will effectively switch
as a result of the signal crossing the AC input level, and will remain in that state as long as the signal does not ring back
above (below) the DC input LOW (HIGH) level.
5. VREF is expected to be equal to 0.5*VddQof the transmitting device, and to track variations in the DC level of the same.
Peak-to-peak noise on VREF may not exceed +2% of the DC value.
6. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set
equal to VREF, and must track variations in the DC level of VREF.
7. VID is the magnitude of the difference between the input level on CLK and the input level on /CLK.
8. The value of VIX is expected to equal 0.5*VddQof the transmitting device and must track variations in the DC level of
the same.
9. Enables on-chip refresh and address counters.
10. IDD specifications are tested after the device is properly initialized.
11. This parameter is sampled.VddQ = 2.5V+0.2V, Vdd = 2.5V + 0.2V , f = 100 MHz, Ta = 25
o
C, VOUT(DC) = VddQ/2,
VOUT(PEAK TO PEAK) = 25mV. DM inputs are grouped with I/O pins - reflecting the fact that they are matched in
loading (to facilitate trace matching at the board level).
12. The CLK//CLK input reference level (for timing referenced to CLK//CLK) is the point at which CLK and /CLK cross;
the input reference level for signals other than CLK//CLK, is VREF.
13. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE<
0.3VddQ is recognized as LOW.
14. t HZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not
referenced to a specific voltage level, but specify when the device output is no longer driving (HZ), or begins driving (LZ).
15. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this
parameter, but system performance (bus turnaround) will degrade accordingly.
16. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this
CLK edge. A valid transition is defined as monotonic, and satisfies the input slew rate specifications.
When no writes were previously in progress on the bus, DQS will be transitioning from High-Z to logic LOW. If a
previous write was in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending
on tDQSS.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M2V12D20TP-10 | 128 x 64 pixel format, LED Backlight available |
| M2S12D30TP-10 | 128 x 64 pixel format, LED Backlight available |
| M2V12D30TP-10 | 128 x 64 pixel format, LED Backlight available |
| M2S12D20TP-10L | 128 x 64 pixel format, LED Backlight available |
| M2V12D20TP-10L | 128 x 64 pixel format, LED Backlight available |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M2S12D20TP-10L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:512M Double Data Rate Synchronous DRAM |
| M2S12D20TP-75 | 制造商:Elpida Memory Inc 功能描述:128M X 4 DDR DRAM, 0.75 ns, PDSO66 |
| M2S12D20TP-75L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:512M Double Data Rate Synchronous DRAM |
| M2S12D30TP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:512M Double Data Rate Synchronous DRAM |
| M2S12D30TP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:512M Double Data Rate Synchronous DRAM |
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