參數(shù)資料
型號： M29W640DB90ZA1E
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
中文描述： 64兆位和8Mb x8或4Mb的x16插槽，啟動塊3V電源快閃記憶體
文件頁數(shù)： 40/49頁
文件大小： 945K
代理商： M29W640DB90ZA1E
M29W640DT, M29W640DB
40/49
Note: For Bottom Boot devices, Erase Block Region 1 is located from address 000000h to 007FFFh and Erase Block Region 2 from address
008000h to 3FFFFFh.
For Top Boot devices, Erase Block Region 1 is located from address 000000h to 3F7FFFh and Erase Block Region 2 from address
3F8000h to 3FFFFFh.
Table 25. Primary Algorithm-Specific Extended Query Table
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Region 3 Information
Number of Erase Blocks of identical size=007Fh+1
Region 3 Information
Block size in Region 3 = 0000h * 256 byte
0
0
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Region 4 Information
Number of Erase Blocks of Identical size=007Fh+1
Region 4 Information
Block size in Region 4 = 0000h * 256 byte
0
0
Address
Data
Description
Value
x16
x8
40h
80h
0050h
Primary Algorithm extended Query table unique ASCII string “PRI”
"P"
41h
82h
0052h
"R"
42h
84h
0049h
"I"
43h
86h
0031h
Major version number, ASCII
“1”
44h
88h
0033h
Minor version number, ASCII
"3"
45h
8Ah
0000h
Address Sensitive Unlock (bits 1 to 0)
00h = required, 01h = not required
Silicon Revision Number (bits 7 to 2)
Yes
46h
8Ch
0002h
Erase Suspend
00h = not supported, 01h = Read only, 02 = Read and Write
2
47h
8Eh
0004h
Block Protection
00h = not supported, x = number of blocks per protection group
4
48h
90h
0001h
Temporary Block Unprotect
00h = not supported, 01h = supported
Yes
49h
92h
0004h
Block Protect /Unprotect
04 = M29W640D
04
4Ah
94h
0000h
Simultaneous Operations, 00h = not supported
No
4Bh
96h
0000h
Burst Mode, 00h = not supported, 01h = supported
No
4Ch
98h
0000h
Page Mode, 00h = not supported, 01h = 4 page word, 02h = 8 page
word
No
4Dh
9Ah
00B5h
V
PP
Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
11.5V
4Eh
9Ch
00C5h
V
PP
Supply Maximum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
12.5V
4Fh
9Eh
0002h
0003h
Top/Bottom Boot Block Flag
02h = Bottom Boot device
03h = Top Boot device
–
Address
Data
Description
Value
x16
x8
相關(guān)PDF資料
PDF描述
M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
M29W640DB70N1E 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
M29W640DB70N1F 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
M29W640DB70N1T 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
M29W640DB70N6E 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W640DB90ZA6 功能描述:閃存 8Mx8 or 4Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W640DB90ZA6T 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 8MX8/4MX16 90NS 63TFBGA - Tape and Reel
M29W640DT90N6 功能描述:閃存 8Mx8 or 4Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W640DT90N6E 功能描述:閃存 8Mx8 or 4Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W640DT90ZA6 功能描述:閃存 8Mx8 or 4Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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