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參數(shù)資料
| 型號： | M29W160ET90ZA6 |
| 廠商： | 意法半導體 |
| 英文描述： | CLAMP |
| 中文描述： | 16兆位（含2Mb x8或1兆x16插槽，引導塊）3V電源快閃記憶體 |
| 文件頁數(shù)： | 16/40頁 |
| 文件大?。?/td> | 665K |
| 代理商： | M29W160ET90ZA6 |
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M29W160ET, M29W160EB
16/40
Table 5. Commands, 8-bit mode, BYTE = V
IL
Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block.
All values in the table are in hexadecimal.
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A19, DQ8-DQ14 and DQ15 are Don’t
Care. DQ15A–1 is A–1 when BYTE is V
IL
or DQ15 when BYTE is V
IH
.
Read/Reset.
After a Read/Reset command, read the memory as normal until another command is issued.
Auto Select.
After an Auto Select command, read Manufacturer ID, Device ID or Block Protection Status.
Program, Unlock Bypass Program, Chip Erase, Block Erase.
After these commands read the Status Register until the Program/
Erase Controller completes and the memory returns to Read Mode. Add additional Blocks during Block Erase Command with additional
Bus Write Operations until Timeout Bit is set.
Unlock Bypass.
After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.
Unlock Bypass Reset.
After the Unlock Bypass Reset command read the memory as normal until another command is issued.
Erase Suspend.
After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and Program com-
mands on non-erasing blocks as normal.
Erase Resume.
After the Erase Resume command the suspended Erase operation resumes, read the Status Register until the Pro-
gram/Erase Controller completes and the memory returns to Read Mode.
CFI Query.
Command is valid when device is ready to read array data or when device is in Auto Select mode.
Command
L
Bus Write Operations
1st
2nd
3rd
4th
5th
6th
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read/Reset
1
X
F0
3
AAA
AA
555
55
X
F0
Auto Select
3
AAA
AA
555
55
AAA
90
Program
4
AAA
AA
555
55
AAA
A0
PA
PD
Unlock Bypass
3
AAA
AA
555
55
AAA
20
Unlock Bypass
Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Block Erase
6+
AAA
AA
555
55
AAA
80
AAA
AA
555
55
BA
30
Erase Suspend
1
X
B0
Erase Resume
1
X
30
Read CFI Query
1
AA
98
相關PDF資料 |
PDF描述 |
|---|---|
| M29W160ET90ZA6E | CLAMP |
| M29W160ET90ZA6F | CLAMP |
| M29W160ET90ZA6T | CLAMP |
| M29W160DB70ZA1T | 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory |
| M29W160DB70ZA6T | 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M29W160ET90ZA6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160ET90ZA6F | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 90NS 48TFBGA - Tape and Reel |
| M29W160ET90ZA6T | 功能描述:閃存 16M (2Mx8 or 1Mx16) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W160FB | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory |
| M29W160FB70N3E | 功能描述:IC FLASH 16MB 70NS 48TSOP AUTO RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Axcell™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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