參數(shù)資料
型號(hào)： M29W160DB90N6T
廠商： 意法半導(dǎo)體
英文描述： 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory
中文描述： 16兆位的2Mb x8或1兆x16插槽，啟動(dòng)塊3V電源快閃記憶體
文件頁數(shù)： 32/40頁
文件大?。?/td> 665K
代理商： M29W160DB90N6T
M29W160ET, M29W160EB
32/40
Table 24. Device Geometry Definition
Address
Data
Description
Value
x16
x8
27h
4Eh
0015h
Device Size = 2
n
in number of Bytes
2 MByte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface Code description
x8, x16
Async.
2Ah
2Bh
54h
56h
0000h
0000h
Maximum number of Bytes in multi-Byte program or page = 2
n
NA
2Ch
58h
0004h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size.
4
2Dh
2Eh
5Ah
5Ch
0000h
0000h
Region 1 Information
Number of identical size erase block = 0000h+1
1
2Fh
30h
5Eh
60h
0040h
0000h
Region 1 Information
Block size in Region 1 = 0040h * 256 Byte
16 KByte
31h
32h
62h
64h
0001h
0000h
Region 2 Information
Number of identical size erase block = 0001h+1
2
33h
34h
66h
68h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 Byte
8 KByte
35h
36h
6Ah
6Ch
0000h
0000h
Region 3 Information
Number of identical size erase block = 0000h+1
1
37h
38h
6Eh
70h
0080h
0000h
Region 3 Information
Block size in Region 3 = 0080h * 256 Byte
32 KByte
39h
3Ah
72h
74h
001Eh
0000h
Region 4 Information
Number of identical-size erase block = 001Eh+1
31
3Bh
3Ch
76h
78h
0000h
0001h
Region 4 Information
Block size in Region 4 = 0100h * 256 Byte
64 KByte
相關(guān)PDF資料
PDF描述
M29W160DB90ZA1T 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory
M29W160DB90ZA6T DUAL 2-INPUT EXCLUSIVE-OR GATE 8-DSBGA -40 to 85
M29W160DT 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory
M29W160DT70M1T 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory
M29W160DT70M6T Dual Inverter Gate 6-SC70 -40 to 85
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W160DB90ZA1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
M29W160DB90ZA1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
M29W160DB90ZA1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
M29W160DB90ZA1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
M29W160DB90ZA6 功能描述:閃存 STD FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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