參數(shù)資料
型號(hào): M29W040-200NZ6R
廠商: 意法半導(dǎo)體
英文描述: 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
中文描述: 4兆位512KB的× 8,統(tǒng)一座低電壓?jiǎn)坞娫撮W存
文件頁(yè)數(shù): 24/31頁(yè)
文件大?。?/td> 205K
代理商: M29W040-200NZ6R
BLOCK ADDRESS
on A16, A17, A18
AI01368D
G, A9 = VID,
E = VIL
n = 0
Wait 4
μ
s
Wait 100
μ
s
W = VIL
W = VIH
G = VIH
READ DQ0 at PROTECTION
ADDRESS: A0, A6 = VIL, A1 = VIH
and
A16, A17, A18 DEFINING BLOCK
A9 = VIH
++n
= 25
START
FAIL
PASS
YES
NO
DQ0
= 1
YES
NO
A9 = VIH
Wait 4
μ
s
Figure 13. BlockProtection Flowchart
24/31
M29W040
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M29W040-200NZ6TR 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040B 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
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M29W040B120K1E 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040B120K1F 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory