參數(shù)資料
型號: M29W040-200NZ1R
廠商: 意法半導體
英文描述: 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
中文描述: 4兆位512KB的× 8,統(tǒng)一座低電壓單電源閃存
文件頁數(shù): 25/31頁
文件大?。?/td> 205K
代理商: M29W040-200NZ1R
PROTECT
ALL BLOCKS
AI01371E
A6, A12, A16 = VIH
E, G, A9 = VIH
DATA
=
00h
E, G, A9 = VID
Wait 4
μ
s
W = VIH
E, G = VIH
READ at UNPROTECTION
ADDRESS: A1, A6 = VIH, A0 = VIL
and
A16, A17, A18 DEFINING BLOCK
(see Note 1)
Wait 10ms
Wait 4
μ
s
INCREMENT
BLOCK
n = 0
Wait 4
μ
s
W = VIL
++n
= 1000
START
FAIL
YES
YES
NO
PASS
NO
LAST
SECT.
YES
NO
Figure 14. BlockUnprotecting Flowchart
Note:
1. A6 is kept atV
during unprotection algorithm in order tosecure best unprotectionverification. During all other protection status
reads, A6 must be kept atV
IL
.
25/31
M29W040
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