參數(shù)資料
型號: M29W040-150NZ6TR
廠商: 意法半導(dǎo)體
英文描述: 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
中文描述: 4兆位512KB的× 8,統(tǒng)一座低電壓單電源閃存
文件頁數(shù): 20/31頁
文件大?。?/td> 205K
代理商: M29W040-150NZ6TR
Symbol
Alt
Parameter
M29W040
Unit
-150
-200
V
CC
= 2.7V to 3.6V
V
CC
= 2.7V to 3.6V
Min
Max
Min
Max
t
WHQ7V1(2)
Write Enable High to DQ7 Valid
(Program, W Controlled)
12
12
μ
s
t
WHQ7V2(2)
Write Enable High to DQ7 Valid
(Block Erase, W Controlled)
1.5
30
1.5
30
sec
t
EHQ7V1(2)
Chip EnableHigh to DQ7 Valid
(Program, E Controlled)
12
12
μ
s
t
EHQ7V2(2)
Chip EnableHigh to DQ7 Valid
(Block Erase, E Controlled)
1.5
30
1.5
30
sec
t
Q7VQV
Q7 Valid to Output Valid (Data Polling)
55
70
ns
t
WHQV1
Write Enable High to Output Valid
(Program)
12
12
μ
s
t
WHQV2
Write Enable High to Output Valid
(Block Erase)
1.5
30
1.5
30
sec
t
EHQV1
Chip EnableHigh to Output Valid
(Program)
12
12
μ
s
t
EHQV2
Chip EnableHigh to Output Valid
(Block Erase)
1.5
30
1.5
30
sec
Notes:
1. Allother timingsare defined in Read AC Characteristics table.
2. t
WHQ7V
is the Programor Erase time.
Table15B. Data Polling and Toggle Bit AC Characteristics
(1)
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to 85
°
C)
20/31
M29W040
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