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參數(shù)資料
| 型號： | M29W040-120K1R |
| 廠商： | 意法半導體 |
| 英文描述： | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| 中文描述： | 4兆位512KB的× 8，統(tǒng)一座低電壓單電源閃存 |
| 文件頁數(shù)： | 2/31頁 |
| 文件大?。?/td> | 205K |
| 代理商： | M29W040-120K1R |
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A1
A2
A0
DQ0
A7
A6
A5
A4
A3
A13
A14
A17
W
VCC
A10
E
A8
A9
DQ7
DQ6
A11
G
DQ5
DQ4
DQ1
DQ2
DQ3
VSS
A16
A15
A12
A18
AI02076
M29W040
(Normal)
8
9
1
16
17
24
25
32
Figure 2B. TSOP Pin Connections
AI02075
A
A13
A8
A9
A11
G
A10
E
D
17
A1
A0
DQ0
D
D
D
D
A7
A6
A5
A4
A3
A2
9
W
1
A
DQ7
A
A14
32
A
V
M29W040
A
D
25
V
Figure 2A. LCC Pin Connections
A1
A2
A0
DQ0
A7
A6
A5
A4
A3
A13
A14
A17
W
VCC
A10
A8
A9
DQ7
DQ6
A11
G
E
DQ5
DQ4
DQ1
DQ2
DQ3
VSS
A16
A15
A12
A18
AI02077
M29W040
(Reverse)
8
9
1
16
17
24
25
32
Figure 2C. TSOP ReversePin Connections
DESCRIPTION
The M29W040 is a non-volatile memory that may
be erased electrically at the block level, and pro-
grammed Byte-by-Byte.
The interface is directly compatible with most mi-
croprocessors. PLCC32,TSOP32(8 x 20mm)and
TSOP32(8 x 14mm)packagesare available.Both
normal and reverse pin outs are available for the
TSOP32 (8 x 20mm) package.
Organisation
TheFlashMemoryorganisationis512Kx8bitswith
Address lines A0-A18 and Data Inputs/Outputs
DQ0-DQ7. Memory control is provided by Chip
Enable, Output Enableand Write Enable Inputs.
Erase and Program are performed through the
internal Program/EraseController (P/E.C.).
Data Outputs bitsDQ7 and DQ6provide polling or
togglesignals during AutomaticProgram or Erase
to indicate the Ready/Busy state of the internal
Program/EraseController.
MemoryBlocks
Erasure of the memory is in blocks. There are 8
uniform blocks of 64 Kbytes each in the memory
address space. Each block can be programmed
and erased over 100,000 cycles. Each uniform
2/31
M29W040
相關PDF資料 |
PDF描述 |
|---|---|
| M29W040-100K6TR | High Speed High Drive Precision Operational Amplifier 8-CDIP -55 to 125 |
| M29W040-100N1TR | High Speed High Drive Precision Operational Amplifier 8-SOIC -55 to 125 |
| M29W040-100N5TR | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-100NZ1R | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-120NZ1R | ; Capacitance:180pF; Capacitance Tolerance:+/- 5 %; Working Voltage, DC:300V; Package/Case:1210; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M29W040-120K1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-120K5R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-120K5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-120K6R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-120K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
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