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參數(shù)資料
| 型號(hào)： | M29W040-120K1R |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| 中文描述： | 4兆位512KB的× 8，統(tǒng)一座低電壓單電源閃存 |
| 文件頁數(shù)： | 16/31頁 |
| 文件大?。?/td> | 205K |
| 代理商： | M29W040-120K1R |
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Symbol
Alt
Parameter
M29W040
Unit
-100
-120
V
CC
= 3.3V
±
0.3V
C
L
= 30pF
V
CC
= 3.3V
±
0.3V
Min
Max
Min
Max
t
AVAV
t
WC
Address Valid to Next Address Valid
100
120
ns
t
WLEL
t
WS
Write Enable Low to Chip Enable Low
0
0
ns
t
ELEH
t
CP
Chip Enable Low to Chip Enable High
45
50
ns
t
DVEH
t
DS
Input Validto Chip Enable High
45
50
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
0
0
ns
t
EHWH
t
WH
Chip Enable High to Write Enable High
0
0
ns
t
EHEL
t
CPH
Chip Enable High to Chip Enable Low
25
30
ns
t
AVEL
t
AS
Address Valid to Chip Enable Low
0
0
ns
t
ELAX
t
AH
Chip EnableLow to Address Transition
45
50
ns
t
GHEL
Output Enable High Chip Enable Low
0
0
ns
t
VCHWL
t
VCS
V
CC
High to WriteEnable Low
50
50
μ
s
t
EHQV1(1)
Chip Enable High to Output Valid(Program)
12
12
μ
s
t
EHQV2(1)
Chip Enable High to Output Valid
(Block Erase)
1.5
30
1.5
30
sec
t
EHGL
t
OEH
Chip Enable High to Output EnableLow
0
0
ns
Note:
1. Time is measured to Data Polling or ToggleBit, t
WHQV
= t
WHQ7V
+ t
Q7VQV
.
Table14A. Write AC Characteristics,Chip Enable Controlled
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to 85
°
C)
PowerUp
ThememoryCommandInterfaceis reseton power
up to ReadArray. EitherEor Wmust be tiedto V
IH
during Power-up to allow maximum security and
the possibilitytowritea commandonthe firstrising
adge of E or W. Anywritecycleinitiationis blocked
when V
CC
is below V
LKO
.
Supply Rails
Normal precautionsmust be takenfor supplyvolt-
age decoupling, each device in a system should
havetheV
CC
rail decoupledwith a1.0
μ
F capacitor
close to the V
CC
and V
SS
pins. The PCB trace
widths should be sufficient to carry the V
CC
pro-
gramand erase currents required.
16/31
M29W040
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W040-100K6TR | High Speed High Drive Precision Operational Amplifier 8-CDIP -55 to 125 |
| M29W040-100N1TR | High Speed High Drive Precision Operational Amplifier 8-SOIC -55 to 125 |
| M29W040-100N5TR | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-100NZ1R | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-120NZ1R | ; Capacitance:180pF; Capacitance Tolerance:+/- 5 %; Working Voltage, DC:300V; Package/Case:1210; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W040-120K1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-120K5R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-120K5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-120K6R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040-120K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
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