參數(shù)資料
型號(hào): M29W008EB70N1E
廠商: 意法半導(dǎo)體
英文描述: 8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
中文描述: 8兆(1兆× 8,引導(dǎo)塊)3V電源快閃記憶體
文件頁數(shù): 30/43頁
文件大小: 282K
代理商: M29W008EB70N1E
7 DC and AC characteristics
M29W008ET, M29W008EB
30/43
Table 12.
Write AC Characteristics, E Controlled
Symbol
Alt
Parameter
M29W008E
Unit
70
90
t
AVAV
t
WC
Address Valid to Next Address Valid
Min
70
90
ns
t
WLEL
t
WS
Write Enable Low to Chip Enable Low
Min
0
0
ns
t
ELEH
t
CP
Chip Enable Low to Chip Enable High
Min
45
50
ns
t
DVEH
t
DS
Input Valid to Chip Enable High
Min
45
50
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
Min
0
0
ns
t
EHWH
t
WH
Chip Enable High to Write Enable High
Min
0
0
ns
t
EHEL
t
CPH
Chip Enable High to Chip Enable Low
Min
30
30
ns
t
AVEL
t
AS
Address Valid to Chip Enable Low
Min
0
0
ns
t
ELAX
t
AH
Chip Enable Low to Address Transition
Min
45
50
ns
t
GHEL
Output Enable High Chip Enable Low
Min
0
0
ns
t
EHGL
t
OEH
Chip Enable High to Output Enable Low
Min
0
0
ns
t
EHRL(1)
1.
Sampled only, not 100% tested.
t
BUSY
Program/Erase Valid to RB Low
Max
30
35
ns
t
VCHWL
t
VCS
V
CC
High to Write Enable Low
Min
50
50
μs
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