參數(shù)資料
型號： M29W008EB70N1E
廠商： 意法半導體
英文描述： 8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
中文描述： 8兆（1兆× 8，引導塊）3V電源快閃記憶體
文件頁數(shù)： 28/43頁
文件大?。?/td> 282K
代理商： M29W008EB70N1E
7 DC and AC characteristics
M29W008ET, M29W008EB
28/43
Figure 11. Write AC Waveforms, W Controlled
Table 11.
Write AC Characteristics, W Controlled
Symbol
Alt
Parameter
M29W008E
Unit
70
90
t
AVAV
t
WC
Address Valid to Next Address Valid
Min
70
90
ns
t
ELWL
t
CS
Chip Enable Low to Write Enable Low
Min
0
0
ns
t
WLWH
t
WP
Write Enable Low to Write Enable High
Min
45
50
ns
t
DVWH
t
DS
Input Valid to Write Enable High
Min
45
50
ns
t
WHDX
t
DH
Write Enable High to Input Transition
Min
0
0
ns
t
WHEH
t
CH
Write Enable High to Chip Enable High
Min
0
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
Min
30
30
ns
t
AVWL
t
AS
Address Valid to Write Enable Low
Min
0
0
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
Min
45
50
ns
t
GHWL
Output Enable High to Write Enable Low
Min
0
0
ns
t
WHGL
t
OEH
Write Enable High to Output Enable Low
Min
0
0
ns
t
WHRL(1)
1.
Sampled only, not 100% tested.
t
BUSY
Program/Erase Valid to RB Low
Max
30
35
ns
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
Min
50
50
μs
AI02192
E
G
W
A0-A19
DQ0-DQ7
VALID
VALID
VCC
tVCHEL
tWHEH
tWHWL
tELWL
tAVWL
tWHGL
tWLAX
tWHDX
tAVAV
tDVWH
tWLWH
tGHWL
RB
tWHRL
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相關代理商/技術參數(shù)
參數(shù)描述
M29W008EB70N1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
M29W008EB70N6E 制造商:Micron Technology Inc 功能描述:FLASH BOTTOM BLOCK 8MB SMD 29W008 制造商:Numonyx Memory Solutions 功能描述:IC, FLASH, 8MBIT, 70NS, TSOP-40, Memory Type:Flash - Boot Block, Memory Size:8Mb
M29W008EB70N6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
M29W008EB90N1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
M29W008EB90N1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
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