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參數資料
| 型號： | M29W004 |
| 廠商： | 意法半導體 |
| 英文描述： | 4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| 中文描述： | 4兆位512KB的× 8，啟動塊低壓單電源閃存 |
| 文件頁數： | 22/30頁 |
| 文件大?。?/td> | 222K |
| 代理商： | M29W004 |
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Sym-
bol
Parameter
M29W004T / M29W004B
Unit
-90
-100
V
CC
= 3.0V to 3.6V
C
L
= 30pF
V
CC
= 2.7V to 3.6V
C
L
= 30pF
Min
Max
Min
Max
t
WHQ7V
Write Enable High to DQ7 Valid
(Program, W Controlled)
10
2400
10
2400
ms
Write Enable High to DQ7 Valid
(Chip Erase, W Controlled)
1.0
30
1.0
30
sec
t
EHQ7V
Chip Enable High to DQ7 Valid
(Program, E Controlled)
10
2400
10
2400
μ
s
Chip Enable High to DQ7 Valid
(Chip Erase, E Controlled)
1.0
30
1.0
30
sec
t
Q7VQV
Q7 Valid to Output Valid (Data Polling)
35
40
ns
t
WHQV
Write Enable High to Output Valid (Program)
10
2400
10
2400
μ
s
Write Enable High to Output Valid (Chip Erase)
1.0
30
1.0
30
sec
t
EHQV
Chip Enable High to Output Valid (Program)
10
2400
10
2400
μ
s
Chip Enable High to Output Valid (Chip Erase)
1.0
30
1.0
30
sec
Note:
1. All other timings are defined in Read AC Characteristics table.
Table 17A. Data Polling and Toggle Bit AC Characteristics
(1)
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to 85
°
C)
Sym-
bol
Parameter
M29W004T / M29W004B
Unit
-120
-150
V
CC
= 2.7V to 3.6V
V
CC
= 2.7V to 3.6V
Min
Max
Min
Max
t
WHQ7V
Write Enable High to DQ7 Valid
(Program, W Controlled)
10
2400
10
2400
ms
Write Enable High to DQ7 Valid
(Chip Erase, W Controlled)
1.0
30
1.0
30
sec
t
EHQ7V
Chip Enable High to DQ7 Valid
(Program, E Controlled)
10
2400
10
2400
μ
s
Chip Enable High to DQ7 Valid
(Chip Erase, E Controlled)
1.0
30
1.0
30
sec
t
Q7VQV
Q7 Valid to Output Valid (Data Polling)
50
55
ns
t
WHQV
Write Enable High to Output Valid (Program)
10
2400
10
2400
μ
s
Write Enable High to Output Valid (Chip Erase)
1.0
30
1.0
30
sec
t
EHQV
Chip Enable High to Output Valid (Program)
10
2400
10
2400
μ
s
Chip Enable High to Output Valid (Chip Erase)
1.0
30
1.0
30
sec
Note:
1. All other timings are defined in Read AC Characteristics table.
Table 17B. Data Polling and Toggle Bit AC Characteristics
(1)
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to 85
°
C)
22/30
M29W004T, M29W004B
相關PDF資料 |
PDF描述 |
|---|---|
| M29W004B-100N1TR | Circular Connector; No. of Contacts:26; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:16-26 |
| M29W004B-100N5TR | Circular Connector; No. of Contacts:26; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:16-26 |
| M29W004B-100N6TR | PT02A SERIES (MS3112) GENERAL DUTY BOX MOUNT RECEPTACLES, STRAIGHT BODY STYLE, SOLDER TERMINATION, 16 SHELL SIZE, 16-8 INSERT ARRANGEMENT, RECEPTACLE GENDER, 8 CONTACTS |
| M29W004B-120N1TR | Circular Connector; Body Material:Aluminum; Series:PT02; No. of Contacts:11; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:18-11 |
| M29W004T-100N1TR | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT02; Number of Contacts:18; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M29W004B | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004B-100N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004B-100N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004B-100N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004B-120N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
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