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參數(shù)資料
| 型號： | M29W002BT90N6T |
| 廠商： | 意法半導體 |
| 英文描述： | 2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| 中文描述： | 2兆位的256Kb × 8，啟動塊低壓單電源閃存 |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 156K |
| 代理商： | M29W002BT90N6T |
1/20
PRELIMINARY DATA
March 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M29W002BT
M29W002BB
2 Mbit (256Kb x8, Boot Block)
Low Voltage Single Supply Flash Memory
I
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
I
ACCESS TIME: 55ns
I
PROGRAMMING TIME
– 10μs by Byte typical
I
7 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 4 Main Blocks
I
PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
I
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
I
TEMPORARY BLOCK UNPROTECTION
MODE
I
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
I
LOW POWER CONSUMPTION
– Standby and Automatic Standby
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code M29W002BT: 40h
– Bottom Device Code M29W002BB: C2h
TSOP40 (N)
10 x 20mm
Figure 1. Logic Diagram
AI02955
18
A0-A17
W
DQ0-DQ7
VCC
M29W002BT
M29W002BB
E
VSS
8
G
RP
RB
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