參數(shù)資料
型號： M29W004T-90N5TR
廠商： 意法半導(dǎo)體
英文描述： Switch Mode Power Supply; Series:ZWS; Output Voltage:12VDC; Output Power Max:30W; Output Current:2.5A; Number of Outputs:1; Leaded Process Compatible:No; Approval Bodies:UL, CSA, CE; Peak Reflow Compatible (260 C):No
中文描述： 4兆位512KB的× 8，啟動塊低壓單電源閃存
文件頁數(shù)： 1/30頁
文件大小： 222K
代理商： M29W004T-90N5TR
AI02063
19
A0-A18
W
DQ0-DQ7
VCC
M29W004T
M29W004B
E
VSS
8
G
RP
RB
Figure 1. Logic Diagram
M29W004T
M29W004B
4 Mbit (512Kb x8, Boot Block)
Low Voltage Single Supply Flash Memory
NOT FOR NEW DESIGN
M29W004T and M29W004B are replaced
respectively by the M29W004BT and
M29W004BB
2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 100ns
FAST PROGRAMMING TIME: 10
μ
s typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Status Register bits and Ready/Busy Output
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code, M29W004T: EAh
– Device Code, M29W004B: EBh
DESCRIPTION
The M29W004 is a non-volatile memory that may
be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byte basis
using only a single 2.7V to 3.6V V
CC
supply. For
Program and Erase operations the necessary high
voltages are generated internally. The device can
also be programmed in standard programmers.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks. Blocks can be protected against pro-
graming and erase on programming equipment,
and temporarily unprotected to make changes in
June 1999
1/30
This is information on a product still in production but not recommended for new designs.
TSOP40 (N)
10 x 20 mm
相關(guān)PDF資料
PDF描述
M29W004 4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W004B-100N1TR Circular Connector; No. of Contacts:26; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:16-26
M29W004B-100N5TR Circular Connector; No. of Contacts:26; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:16-26
M29W004B-100N6TR PT02A SERIES (MS3112) GENERAL DUTY BOX MOUNT RECEPTACLES, STRAIGHT BODY STYLE, SOLDER TERMINATION, 16 SHELL SIZE, 16-8 INSERT ARRANGEMENT, RECEPTACLE GENDER, 8 CONTACTS
M29W004B-120N1TR Circular Connector; Body Material:Aluminum; Series:PT02; No. of Contacts:11; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:18-11
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W004T-90N6TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008AB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008AB100N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008AB100N5T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008AB100N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
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