參數資料
型號： M29W002BT70N6T
廠商： 意法半導體
英文描述： 2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory
中文描述： 2兆位的256Kb × 8，啟動塊低壓單電源閃存
文件頁數： 12/20頁
文件大小： 156K
代理商： M29W002BT70N6T
M29W002BT, M29W002BB
12/20
Table 11. DC Characteristics
(T
A
= 0 to 70°C or –40 to 85°C)
Symbol
Note: 1. Sampled only, not 100% tested.
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±1
μA
I
CC1
Supply Current (Read)
E = V
IL
, G = V
IH
, f = 6MHz
10
mA
I
CC2
Supply Current (Standby)
E = V
CC
± 0.2V
100
μA
I
CC3
(1)
Supply Current (Program/Erase)
Program/Erase
Controller active
20
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7V
CC
V
CC
+ 0.3
V
V
OL
Output Low Voltage
I
OL
= 1.8mA
0.45
V
V
OH
Output High Voltage
I
OH
= –100μA
V
CC
– 0.4
V
V
ID
Identification Voltage
11.5
12.5
V
I
ID
Identification Current
A9 = V
ID
100
μA
V
LKO
(1)
Program/Erase Lockout Supply
Voltage
1.8
2.3
V
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