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參數(shù)資料
| 型號： | M29KW064E90ZA1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| 中文描述： | 64兆位4Mb的x16插槽，統(tǒng)一座3V電源LightFlash⑩記憶 |
| 文件頁數(shù)： | 1/30頁 |
| 文件大小： | 233K |
| 代理商： | M29KW064E90ZA1T |
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PRODUCT PREVIEW
July 2002
This is preliminary information on a new product now in development. Details are subject to change without notice.
M29KW064E
64 Mbit (4Mb x16, Uniform Block)
3V Supply LightF
lash Memory
FEATURES SUMMARY
I
SUPPLY VOLTAGE
– V
CC
=
2.7V to 3.6V for Read
– V
PP
=
11.4V to 12.6V for Program and Erase
I
ACCESS TIME: 90, 110ns
I
PROGRAMMING TIME
– 9μs per Word typical
– Multiple Word Programming Option (8s
typical Chip Program)
I
ERASE TIME
– 41s typical factory Chip Erase
I
UNIFORM BLOCKS
– 32 blocks of 2 Mbits
I
PROGRAM/ERASE CONTROLLER
– Embedded Word Program algorithms
I
10,000 PROGRAM/ERASE CYCLES per
BLOCK
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code : 88AFh
Figure 1. Packages
TSOP48 (N)
12 x 20mm
TFBGA48 (ZA)
6 x 9mm
FBGA
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