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參數(shù)資料
| 型號： | M29F512B45K1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 512 Kbit 64Kb x8, Bulk Single Supply Flash Memory |
| 中文描述： | 512千位64Kb的× 8，散單電源閃存 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 136K |
| 代理商： | M29F512B45K1T |
M29F512B
2/16
Figure 2A. TSOPConnections
A1
A2
A0
DQ0
A7
A6
A5
A4
A3
A13
A14
NC
W
VCC
A10
E
A8
A9
DQ7
DQ6
A11
G
DQ5
DQ4
DQ1
DQ2
DQ3
VSS
NC
A15
A12
NC
AI02741
M29F512B
8
9
1
16
17
24
25
32
Table 1. Signal Names
A0-A15
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
V
CC
Supply Voltage
V
SS
Ground
NC
Not Connected Internally
quired to update the memory contents. The end of
a program or erase operation can be detected and
any error conditions identified. The command set
required to control the memory is consistent with
JEDEC standards.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in TSOP32 (8 x 14mm) and
PLCC32 packages. Access times of 45ns and
70ns are available. The memory is supplied with
all the bits erased (set to ’1’).
SIGNAL DESCRIPTIONS
See Figure 1, Logic Diagram, and Table 1, Signal
Names, for a brief overview of the signals connect-
ed to this device.
Address Inputs (A0-A15).
The Address Inputs
select the cells in the memory array to access dur-
ing Bus Read operations. During Bus Write opera-
tions they control the commands sent to the
Command Interface of the internal state machine.
Data Inputs/Outputs (DQ0-DQ7).
The Data In-
puts/Outputs output the data stored at the selected
address during a Bus Read operation. During Bus
Write operations they represent the commands
sent to the Command Interface of the internal state
machine.
Figure 2B. PLCC Connections
AI02930
N
A13
A8
A9
A11
G
A10
E
D
17
A1
A0
DQ0
D
D
D
D
A7
A6
A5
A4
A3
A2
9
W
1
N
DQ7
A
A14
32
N
V
M29F512B
A
D
25
V
SUMMARY DESCRIPTION
The M29F512B is a 512 Kbit (64Kb x8) non-vola-
tile memory that can be read, erased and repro-
grammed. These operations can be performed
using a single 5V supply. On power-up the memo-
ry defaults to its Read mode where it can be read
in the same way as a ROM or EPROM.
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller simplifies the process of
programming or erasing the memory by taking
care of all of the special operations that are re-
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參數(shù)描述 |
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| M29F512B45NZ1 | 功能描述:閃存 512K (64Kx8) 45ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F512B70K1 | 功能描述:閃存 512K (64Kx8) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F800AB70M1 | 功能描述:閃存 STD FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F800AT70N6 | 功能描述:閃存 1Mx8 or 512Kx16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F800AT-90NI | 制造商:STMicroelectronics 功能描述: |
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