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參數(shù)資料
| 型號： | M29F400BT90M1F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory |
| 中文描述： | 4兆位（512KB的x8或256Kb的x16插槽，引導(dǎo)塊）單電源閃存 |
| 文件頁數(shù)： | 13/40頁 |
| 文件大小： | 215K |
| 代理商： | M29F400BT90M1F |
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M29F400BT, M29F400BB
Bus operations
13/40
3
Bus operations
There are five standard bus operations that control the device. These are Bus Read, Bus
Write, Output Disable, Standby and Automatic Standby. See
Table 2.
and
Table 3.
, Bus
Operations, for a summary. Typically glitches of less than 5ns on Chip Enable or Write
Enable are ignored by the memory and do not affect bus operations.
3.1
Bus Read
Bus Read operations read from the memory cells, or specific registers in the Command
Interface. A valid Bus Read operation involves setting the desired address on the Address
Inputs, applying a Low signal, V
IL
, to Chip Enable and Output Enable and keeping Write
Enable High, V
IH
. The Data Inputs/Outputs will output the value, see
Figure 8.
, Read Mode
AC Waveforms, and
Table 12.
, Read AC Characteristics, for details of when the output
becomes valid.
3.2
Bus Write
Bus Write operations write to the Command Interface. A valid Bus Write operation begins by
setting the desired address on the Address Inputs. The Address Inputs are latched by the
Command Interface on the falling edge of Chip Enable or Write Enable, whichever occurs
last. The Data Inputs/Outputs are latched by the Command Interface on the rising edge of
Chip Enable or Write Enable, whichever occurs first. Output Enable must remain High, V
IH
,
during the whole Bus Write operation. See
Figure 9.
and
Figure 10.
, Write AC Waveforms,
and
Table 13.
and
Table 14.
, Write AC Characteristics, for details of the timing requirements.
3.3
Output Disable
The Data Inputs/Outputs are in the high impedance state when Output Enable is High, V
IH
.
3.4
Standby
When Chip Enable is High, V
IH
, the Data Inputs/Outputs pins are placed in the high-
impedance state and the Supply Current is reduced to the Standby level.
When Chip Enable is at V
IH
the Supply Current is reduced to the TTL Standby Supply
Current, I
CC2
. To further reduce the Supply Current to the CMOS Standby Supply Current,
I
CC3
, Chip Enable should be held within V
CC
± 0.2V. For Standby current levels see
Table
11.
, DC Characteristics.
During program or erase operations the memory will continue to use the Program/Erase
Supply Current, I
CC4
, for Program or Erase operations until the operation completes.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29F400BT90N1 | 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F400BT90N1T | 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F400BT90N6 | 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F400BT90N6T | 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F400FB55D11 | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE 5V - Gel-pak, waffle pack, wafer, diced wafer on film |
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