參數(shù)資料
型號(hào)： M29F400BB90MT3E
廠商： NUMONYX
元件分類： PROM
英文描述： 256K X 16 FLASH 5V PROM, 70 ns, PDSO44
封裝： 0.500 INCH, LEAD FREE, PLASTIC, SOP-44
文件頁數(shù)： 3/40頁
文件大小： 316K
代理商： M29F400BB90MT3E
M29F400BT, M29F400BB
Signal descriptions
2.7
Write Enable (W)
The Write Enable, W, controls the Bus Write operation of the memory’s Command Interface.
2.8
Reset/Block Temporary Unprotect (RP)
The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the
memory or to temporarily unprotect all Blocks that have been protected.
A Hardware Reset is achieved by holding Reset/Block Temporary Unprotect Low, VIL, for at
least tPLPX. After Reset/Block Temporary Unprotect goes High, VIH, the memory will be
ready for Bus Read and Bus Write operations after tPHEL or tRHEL, whichever occurs last.
See the Ready/Busy Output section, Table Table 15. and Figure Figure 11.,
Reset/Temporary Unprotect AC Characteristics for more details.
Holding RP at VID will temporarily unprotect the protected Blocks in the memory. Program
and Erase operations on all blocks will be possible. The transition from VIH to VID must be
slower than tPHPHH.
2.9
Ready/Busy output (RB)
The Ready/Busy pin is an open-drain output that can be used to identify when the memory
array can be read. Ready/Busy is high-impedance during Read mode, Auto Select mode
and Erase Suspend mode.
After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy
becomes high-impedance. See Table Table 15. and Figure Figure 11., Reset/Temporary
Unprotect AC Characteristics.
During Program or Erase operations Ready/Busy is Low, VOL. Ready/Busy will remain Low
during Read/Reset commands or Hardware Resets until the memory is ready to enter Read
mode.
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
2.10
Byte/Word organization select (BYTE)
The Byte/Word Organization Select pin is used to switch between the 8-bit and 16-bit Bus
modes of the memory. When Byte/Word Organization Select is Low, VIL, the memory is in 8-
bit mode, when it is High, VIH, the memory is in 16-bit mode.
相關(guān)PDF資料
PDF描述
M29F400BT70MT6T 256K X 16 FLASH 5V PROM, 70 ns, PDSO44
M29F800DB70N3F 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
M29F800DB90N6T 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
M29W160BT90ZA6 1M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
M29W400BT70M6T 256K X 16 FLASH 2.7V PROM, 70 ns, PDSO44
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29F400BB90N1 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BB90N1T 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BB90N6 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BB90N6T 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BT45N1 功能描述:閃存 512Kx8 or 256Kx16 45 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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