參數(shù)資料
型號： M29F400BB90MT3E
廠商： NUMONYX
元件分類： PROM
英文描述： 256K X 16 FLASH 5V PROM, 70 ns, PDSO44
封裝： 0.500 INCH, LEAD FREE, PLASTIC, SOP-44
文件頁數(shù)： 2/40頁
文件大?。?/td> 316K
代理商： M29F400BB90MT3E
Signal descriptions
M29F400BT, M29F400BB
2
Signal descriptions
See Figure Figure 1., Logic Diagram, and Table Table 1., Signal Names, for a brief overview
of the signals connected to this device.
2.1
Address inputs (A0-A17)
The Address Inputs select the cells in the memory array to access during Bus Read
operations. During Bus Write operations they control the commands sent to the Command
Interface of the internal state machine.
2.2
Data inputs/outputs (DQ0-DQ7)
The Data Inputs/Outputs output the data stored at the selected address during a Bus Read
operation. During Bus Write operations they represent the commands sent to the Command
Interface of the internal state machine.
2.3
Data inputs/outputs (DQ8-DQ14)
The Data Inputs/Outputs output the data stored at the selected address during a Bus Read
operation when BYTE is High, VIH. When BYTE is Low, VIL, these pins are not used and are
high impedance. During Bus Write operations the Command Register does not use these
bits. When reading the Status Register these bits should be ignored.
2.4
Data input/output or address input (DQ15A-1)
When BYTE is High, VIH, this pin behaves as a Data Input/Output pin (as DQ8-DQ14).
When BYTE is Low, VIL, this pin behaves as an address pin; DQ15A–1 Low will select the
LSB of the Word on the other addresses, DQ15A–1 High will select the MSB. Throughout
the text consider references to the Data Input/Output to include this pin when BYTE is High
and references to the Address Inputs to include this pin when BYTE is Low except when
stated explicitly otherwise.
2.5
Chip Enable (E)
The Chip Enable, E, activates the memory, allowing Bus Read and Bus Write operations to
be performed. When Chip Enable is High, VIH, all other pins are ignored.
2.6
Output Enable (G)
The Output Enable, G, controls the Bus Read operation of the memory.
相關(guān)PDF資料
PDF描述
M29F400BT70MT6T 256K X 16 FLASH 5V PROM, 70 ns, PDSO44
M29F800DB70N3F 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
M29F800DB90N6T 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
M29W160BT90ZA6 1M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
M29W400BT70M6T 256K X 16 FLASH 2.7V PROM, 70 ns, PDSO44
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29F400BB90N1 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BB90N1T 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BB90N6 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BB90N6T 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BT45N1 功能描述:閃存 512Kx8 or 256Kx16 45 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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