參數(shù)資料
型號: M29F040-90XN6TR
廠商: 意法半導(dǎo)體
英文描述: Excalibur Low-Noise High-Speed JFET-Input Dual Operational Amplifier 8-SOIC
中文描述: 4兆位512KB的× 8,統(tǒng)一座單電源閃存
文件頁數(shù): 18/31頁
文件大?。?/td> 232K
代理商: M29F040-90XN6TR
Symbol
Alt
Parameter
M29F040
Unit
-120
-150
V
CC
= 5V
±
10%
V
CC
= 5V
±
10%
Standard
Interface
Standard
Interface
Min
Max
Min
Max
t
AVAV
t
WC
Address Valid to Next Address Valid
120
150
ns
t
WLEL
t
WS
Write Enable Low to Chip Enable Low
0
0
ns
t
ELEH
t
CP
Chip Enable Low to Chip Enable High
50
50
ns
t
DVEH
t
DS
Input Valid to Chip Enable High
50
50
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
0
0
ns
t
EHWH
t
WH
Chip Enable High to Write Enable High
0
0
ns
t
EHEL
t
CPH
Chip Enable High to Chip Enable Low
20
20
ns
t
AVEL
t
AS
Address Valid to Chip Enable Low
0
0
ns
t
ELAX
t
AH
Chip Enable Low to Address Transition
50
50
ns
t
GHEL
Output Enable High Chip Enable Low
0
0
ns
t
VCHWL
t
VCS
V
CC
High to Write Enable Low
50
50
μ
s
t
EHQV1
(1)
Chip Enable High to Output Valid (Program)
10
10
μ
s
t
EHQV2
(1)
Chip Enable High to Output Valid
(Block Erase)
1.0
30
1.0
30
sec
t
EHGL
t
OEH
Chip Enable High to Output Enable Low
0
0
ns
Note:
1. Time is measured to Data Polling or Toggle Bit, t
WHQV
= t
WHQ7V
+ t
Q7VQV
.
Table 14B. Write AC Characteristics, Chip Enable Controlled
(T
A
= 0 to 70
°
C, –20 to 85
°
C, –40 to 85
°
C or –40 to 125
°
C)
18/31
M29F040
相關(guān)PDF資料
PDF描述
M29F040-90XN6R Excalibur Low-Noise High-Speed JFET-Input Dual Operational Amplifier 8-SOIC
M29F040-90XN5R Excalibur Low-Noise High-Speed JFET-Input Dual Operational Amplifier 8-PDIP
M29F040-90XN3TR Excalibur Low-Noise High-Speed JFET-Input Dual Operational Amplifier 8-PDIP
M29F040-90XN1TR Excalibur Low-Noise High-Speed JFET-Input Dual Operational Amplifier 8-SOIC
M29F040-90XK6TR Excalibur Low-Noise High-Speed JFET-Input Dual Operational Amplifier 8-SOIC
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