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參數(shù)資料
| 型號： | M29F016D55M1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
| 中文描述： | 16兆位（含2Mb × 8，統(tǒng)一座）5V電源快閃記憶體 |
| 文件頁數(shù)： | 5/37頁 |
| 文件大?。?/td> | 536K |
| 代理商： | M29F016D55M1T |
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M29F016D
SUMMARY DESCRIPTION
The M29F016D is a 16 Mbit (2Mb x8) non-volatile
memory that can be read, erased and repro-
grammed. These operations can be performed us-
ing a single low voltage 5V supply. On power-up
the memory defaults to its Read mode where it can
be read in the same way as a ROM or EPROM.
The memory is divided into 32 uniform blocks of
64Kbytes (see Figure 5, Block Addresses) that
can be erased independently so it is possible to
preserve valid data while old data is erased.
Blocks can be protected in groups of 4 to prevent
accidental Program or Erase commands from
modifying the memory. Program and Erase com-
mands are written to the Command Interface of
the memory. An on-chip Program/Erase Controller
simplifies the process of programming or erasing
the memory by taking care of all of the special op-
erations that are required to update the memory
contents. The end of a program or erase operation
can be detected and any error conditions identi-
fied. The command set required to control the
memory is consistent with JEDEC standards.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in TSOP40 (10 x 20mm) and
SO44 packages. Access times of 55, 70 and 90ns
are available. The memory is supplied with all the
bits erased (set to ’1’).
Figure 2. Logic Diagram
Table 1. Signal Names
AI05269
21
A0-A20
W
DQ0-DQ7
VCC
M29F016D
E
VSS
8
G
RP
RB
A0-A20
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
V
CC
Supply Voltage
V
SS
Ground
NC
Not Connected Internally
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PDF描述 |
|---|---|
| M29F016D55M6T | 16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F016D55N1T | 16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F016D55N6T | 16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F016D70M1T | 16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F016D70M6T | 16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29F016D55M6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F016D55N1 | 功能描述:電可擦除可編程只讀存儲器 16M (2Mx8) 55ns RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M29F016D55N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F016D55N6 | 功能描述:閃存 16M (2Mx8) 55ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F016D55N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory |
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