參數(shù)資料
型號: M29F016D55M1T
廠商: 意法半導體
英文描述: 16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory
中文描述: 16兆位(含2Mb × 8,統(tǒng)一座)5V電源快閃記憶體
文件頁數(shù): 20/37頁
文件大?。?/td> 536K
代理商: M29F016D55M1T
M29F016D
20/37
Figure 11. Write AC Waveforms, Write Enable Controlled
Table 11. Write AC Characteristics, Write Enable Controlled
Note: 1. Sampled only, not 100% tested.
Symbol
Alt
Parameter
M29F016D
Unit
55
70/ 90
t
AVAV
t
WC
Address Valid to Next Address Valid
Min
55
70
ns
t
ELWL
t
CS
Chip Enable Low to Write Enable Low
Min
0
0
ns
t
WLWH
t
WP
Write Enable Low to Write Enable High
Min
45
45
ns
t
DVWH
t
DS
Input Valid to Write Enable High
Min
45
45
ns
t
WHDX
t
DH
Write Enable High to Input Transition
Min
0
0
ns
t
WHEH
t
CH
Write Enable High to Chip Enable High
Min
0
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
Min
20
20
ns
t
AVWL
t
AS
Address Valid to Write Enable Low
Min
0
0
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
Min
45
45
ns
t
GHWL
Output Enable High to Write Enable Low
Min
0
0
ns
t
WHGL
t
OEH
Write Enable High to Output Enable Low
Min
0
0
ns
t
WHRL (1)
t
BUSY
Program/Erase Valid to RB Low
Max
30
30
ns
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
Min
50
50
μs
AI05273
E
G
W
A0-A20
DQ0-DQ7
VALID
VALID
VCC
tVCHEL
tWHEH
tWHWL
tELWL
tAVWL
tWHGL
tWLAX
tWHDX
tAVAV
tDVWH
tWLWH
tGHWL
RB
tWHRL
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