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參數(shù)資料
| 型號： | M29DW640D70ZA1F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 64兆位（8兆x8或4Mb的x16插槽，多行，頁，引導(dǎo)塊）3V電源快閃記憶體 |
| 文件頁數(shù)： | 49/56頁 |
| 文件大?。?/td> | 942K |
| 代理商： | M29DW640D70ZA1F |
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M29DW640D
APPENDIX D. BLOCK PROTECTION
Block protection can be used to prevent any oper-
ation from modifying the data stored in the memo-
ry. The blocks are protected in groups, refer to
Appendix
A
, Table
23
for details of the Protection
Groups. Once protected, Program and Erase op-
erations within the protected group fail to change
the data.
There are three techniques that can be used to
control Block Protection, these are the Program-
mer technique, the In-System technique and Tem-
porary Unprotection. Temporary Unprotection is
controlled by the Reset/Block Temporary Unpro-
tection pin, RP; this is described in the Signal De-
scriptions section.
To protect the Extended Block issue the Enter Ex-
tended Block command and then use either the
Programmer or In-System technique. Once pro-
tected issue the Exit Extended Block command to
return to read mode. The Extended Block protec-
tion is irreversible, once protected the protection
cannot be undone.
Programmer Technique
The Programmer technique uses high (V
ID
) volt-
age levels on some of the bus pins. These cannot
be achieved using a standard microprocessor bus,
therefore the technique is recommended only for
use in Programming Equipment.
To protect a group of blocks follow the flowchart in
Figure 21., Programmer Equipment Group Protect
Flowchart
. To unprotect the whole chip it is neces-
sary to protect all of the groups first, then all
groups can be unprotected at the same time. To
unprotect the chip follow
Figure 22., Programmer
Equipment Chip Unprotect Flowchart
.
Table
31., Programmer Technique Bus Operations,
BYTE = V
IH
or V
IL
, gives a summary of each oper-
ation.
The timing on these flowcharts is critical. Care
should be taken to ensure that, where a pause is
specified, it is followed as closely as possible. Do
not abort the procedure before reaching the end.
Chip Unprotect can take several seconds and a
user message should be provided to show that the
operation is progressing.
In-System Technique
The In-System technique requires a high voltage
level on the Reset/Blocks Temporary Unprotect
pin, RP
(1)
. This can be achieved without violating
the maximum ratings of the components on the mi-
croprocessor bus, therefore this technique is suit-
able for use after the memory has been fitted to
the system.
To protect a group of blocks follow the flowchart in
Figure 23., In-System Equipment Group Protect
Flowchart
. To unprotect the whole chip it is neces-
sary to protect all of the groups first, then all the
groups can be unprotected at the same time. To
unprotect the chip follow
Figure 24., In-System
Equipment Chip Unprotect Flowchart
.
The timing on these flowcharts is critical. Care
should be taken to ensure that, where a pause is
specified, it is followed as closely as possible. Do
not allow the microprocessor to service interrupts
that will upset the timing and do not abort the pro-
cedure before reaching the end. Chip Unprotect
can take several seconds and a user message
should be provided to show that the operation is
progressing.
Note: 1. RP can be either at V
IH
or at V
ID
when using the In-Sys-
tem Technique to protect the Extended Block.
Table 31. Programmer Technique Bus Operations, BYTE = V
IH
or V
IL
Note: 1. Block Protection Groups are shown in Appendix
D
, Table
23
.
Operation
E
G
W
Address Inputs
A0-A21
Data Inputs/Outputs
DQ15A–1, DQ14-DQ0
Block (Group)
Protect
(1)
V
IL
V
ID
V
IL
Pulse
A9 = V
ID
, A12-A21 Block Address
Others = X
X
Chip Unprotect
V
ID
V
ID
V
IL
Pulse
A9 = V
ID
, A12 = V
IH
, A15 = V
IH
Others = X
X
Block (Group)
Protect Verify
V
IL
V
IL
V
IH
A0 = V
IL
, A1 = V
IH
, A2 = V
IL
, A3 = V
IL
,
A6 = V
IL
, A9 = V
ID
,
A12-A21 Block Address
Others = X
Pass = xx01h
Retry = xx00h.
Block (Group)
Unprotect Verify
V
IL
V
IL
V
IH
A0 = V
IL
, A1 = V
IH
, A2 = V
IL
, A3 = V
IL
,
A6 = V
IH
, A9 = V
ID
,
A12-A21 Block Address
Others = X
Pass = xx00h
Retry = xx01h.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29DW640D70ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70ZA6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70ZA6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70ZA6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
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