參數(shù)資料
型號(hào)： M29DW640D70ZA1E
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
中文描述： 64兆位（8兆x8或4Mb的x16插槽，多行，頁(yè)，引導(dǎo)塊）3V電源快閃記憶體
文件頁(yè)數(shù)： 12/56頁(yè)
文件大?。?/td> 942K
代理商： M29DW640D70ZA1E
M29DW640D
12/56
Ready/Busy Output (RB).
The Ready/Busy pin
is an open-drain output that can be used to identify
when the device is performing a Program or Erase
operation. During Program or Erase operations
Ready/Busy is Low, V
OL
. Ready/Busy is high-im-
pedance during Read mode, Auto Select mode
and Erase Suspend mode.
After a Hardware Reset, Bus Read and Bus Write
operations cannot begin until Ready/Busy be-
comes high-impedance. See Table
19
and
Figure
17., Reset/Block Temporary Unprotect AC Wave-
forms
.
The use of an open-drain output allows the Ready/
Busy pins from several memories to be connected
to a single pull-up resistor. A Low will then indicate
that one, or more, of the memories is busy.
Byte/Word Organization Select (BYTE).
The
Byte/Word Organization Select pin is used to
switch between the x8 and x16 Bus modes of the
memory. When Byte/Word Organization Select is
Low, V
IL
, the memory is in x8 mode, when it is
High, V
IH
, the memory is in x16 mode.
V
CC
Supply Voltage (2.7V to 3.6V).
V
CC
vides the power supply for all operations (Read,
Program and Erase).
The Command Interface is disabled when the V
CC
Supply Voltage is less than the Lockout Voltage,
V
LKO
. This prevents Bus Write operations from ac-
cidentally damaging the data during power up,
power down and power surges. If the Program/
Erase Controller is programming or erasing during
this time then the operation aborts and the memo-
ry contents being altered will be invalid.
A 0.1μF capacitor should be connected between
the V
CC
Supply Voltage pin and the V
SS
Ground
pin to decouple the current surges from the power
supply. The PCB track widths must be sufficient to
carry the currents required during Program and
Erase operations, I
CC3
.
V
SS
Ground.
V
SS
is the reference for all voltage
measurements. The device features two V
SS
pins
both of which must be connected to the system
ground.
pro-
相關(guān)PDF資料
PDF描述
M29DW640D70ZA1 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640D70N6T 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640D70N6F 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640D70N6E 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640D70N6 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29DW640D70ZA1F 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640D70ZA1T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640D70ZA6 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640D70ZA6E 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640D70ZA6F 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
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