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參數(shù)資料
| 型號： | M29DW640D70N6 |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 64兆位（8兆x8或4Mb的x16插槽，多行，頁，引導塊）3V電源快閃記憶體 |
| 文件頁數(shù)： | 25/56頁 |
| 文件大?。?/td> | 942K |
| 代理商： | M29DW640D70N6 |
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M29DW640D
DUAL OPERATIONS AND MULTIPLE BANK ARCHITECTURE
The
Multiple
Bank
Architecture
M29DW640D gives greater flexibility for software
developers to split the code and data spaces with-
in the memory array. The Dual Operations feature
simplifies the software management of the device
by allowing code to be executed from one bank
while another bank is being programmed or
erased.
The Dual Operations feature means that while pro-
gramming or erasing in one bank, read operations
are possible in another bank with zero latency.
Only one bank at a time is allowed to be in pro-
gram or erase mode. However, certain commands
can cross bank boundaries, which means that dur-
ing an operation only the banks that are not con-
cerned with the cross bank operation are available
for dual operations. For example, if a Block Erase
command is issued to erase blocks in both Bank A
and Bank B, then only Banks C or D are available
of
the
for read operations while the erase is being exe-
cuted.
If a read operation is required in a bank, which is
programming or erasing, the program or erase op-
eration can be suspended.
Also if the suspended operation was erase then a
program command can be issued to another
block, so the device can have one block in Erase
Suspend mode, one programming and other
banks in read mode.
By using a combination of these features, read op-
erations are possible at any moment in the
M29DW640D device.
Tables
9
and
10
show the dual operations possible
in other banks and in the same bank. Note that
only the commonly used commands are repre-
sented in these tables.
Table 9. Dual Operations Allowed In Other Banks
Note: 1. If several banks are involved in a program or erase operation, then only the banks that are not concerned with the operation are
available for dual operations.
2. Only after a program or erase operation in that bank.
3. Only after a Program or Erase Suspend command in that bank.
4. Only an Erase Resume is allowed if the bank was previously in Erase Suspend mode.
5. Only a Program Resume is allowed if the bank was previously in Program Suspend mode.
6. Read Status Register is not a command. The Status Register can be read during a block program or erase operation.
Status of bank
(1)
Commands allowed in another bank
(1)
Read
Array
Read
Status
Register
(6)
Read
CFI
Query
Auto
Select
Program
Erase
Program/
Erase
Suspend
Program/
Erase
Resume
Idle
Yes
Yes
(2)
Yes
Yes
Yes
Yes
Yes
(2)
Yes
(3)
Programming
Yes
No
No
No
–
–
No
No
Erasing
Yes
No
No
No
–
–
No
No
Program Suspended
Yes
No
Yes
Yes
No
No
–
Yes
(5)
Erase Suspended
Yes
No
Yes
Yes
Yes
No
–
Yes
(4)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29DW640D70N6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:FLASH NOR HIGH DENSITY & CONSUMER |
| M29DW640D70N6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70ZA1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70ZA1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
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