參數(shù)資料
型號(hào): M29DW324DT90ZA6F
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 2M X 16 FLASH 3V PROM, 90 ns, PBGA63
封裝: 7 X 11 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-63
文件頁數(shù): 11/50頁
文件大?。?/td> 878K
代理商: M29DW324DT90ZA6F
19/50
M29DW324DT, M29DW324DB
Table 6. Commands, 8-bit mode, BYTE = VIL
Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal.
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15 are Don’t
Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.
Table 7. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.
4. Maximum value measured at worst case conditions for both temperature and VCC.
Command
L
e
ngth
Bus Write Operations
1st
2nd
3rd
4th
5th
6th
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Read/Reset
1X
F0
3
AAA
AA
555
55
X
F0
Auto Select
3
AAA
AA
555
55
(BKA)
AAA
90
Program
4
AAA
AA
555
55
AAA
A0
PA
PD
Quadruple Byte Program
5
AAA
55
PA0
PD0
PA1
PD1
PA2
PD2
PA3
PD3
Unlock Bypass
3
AAA
AA
555
55
AAA
20
Unlock Bypass Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Block Erase
6+
AAA
AA
555
55
AAA
80
AAA
AA
555
55
BA
30
Erase Suspend
1
BKA
B0
Erase Resume
1
BKA
30
Read CFI Query
1
AA
98
Enter Extended Block
3
AAA
AA
555
55
AAA
88
Exit Extended Block
4
AAA
AA
555
55
AAA
90
X
00
Parameter
Min
Typ (1, 2)
Max(2)
Unit
Chip Erase
40
200(3)
s
Block Erase (64 KBytes)
0.8
6(3)
s
Erase Suspend Latency time
50(4)
s
Program (Byte or Word)
10
200(4)
s
Double Word Program (Byte or Word)
10
200(3)
s
Chip Program (Byte by Byte)
40
200(3)
s
Chip Program (Word by Word)
20
100(3)
s
Chip Program (Quadruple Byte or Double Word)
10
100
s
Program/Erase Cycles (per Block)
100,000
cycles
Data Retention
20
years
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