參數(shù)資料
型號: M29DW128F
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述: 128兆位(16Mb的x8或和8Mb x16插槽,多行,頁,引導(dǎo)塊)3V電源,快閃記憶體
文件頁數(shù): 79/93頁
文件大?。?/td> 719K
代理商: M29DW128F
M29DW128F
12 Part numbering
79/93
Table 38.
Device Geometry Definition
1.
Erase Block Region 1 corresponds to addresses 000000h to 007FFFh; Erase block Region 2 corresponds to addresses
008000h to 3F7FFFh and Erase Block Region 3 corresponds to addresses 3F8000h to 3FFFFFh.
Address
Data
Description
Value
x16
x8
27h
4Eh
0018h
Device Size = 2
n
in number of Bytes
16
MBytes
28h
50h
0001h
TBGA64
(x16 only)
Flash Device Interface Code description
x8, x16
Async.
0002h
TSOP56
(x8/x16)
29h
52h
0000h
Both
Packages
2Ah
54h
0006h
Maximum number of Bytes in Multiple-Byte program or Page= 2
n
64
2Bh
56h
0000h
2Ch
58h
0003h
Number of Erase Block Regions
(1)
. It specifies the number of regions
containing contiguous Erase Blocks of the same size.
3
2Dh
2Eh
5Ah
5Ch
0007h
0000h
Erase Block Region 1 Information
Number of Erase Blocks of identical size = 0007h+1
8
2Fh
30h
5Eh
60h
0020h
0000h
Erase Block Region 1 Information
Block size in Region 1 = 0020h * 256 Byte
8
KBytes
31h
32h
62h
64h
00FDh
0000h
Erase Block Region 2 Information
Number of Erase Blocks of identical size = 00FDh+1
254
33h
34h
66h
68h
0000h
0001h
Erase Block Region 2 Information
Block size in Region 2 = 0100h * 256 Byte
64
KBytes
35h
36h
6Ah
6Ch
0007h
0000h
Erase Block Region 3 information
Number of Erase Blocks of identical size = 0007h + 1
8
37h
38h
6Eh
70h
0020h
0000h
Erase Block Region 3 information
Block size in region 3 = 0020h * 256 Bytes
8
KBytes
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 information
0
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