參數(shù)資料
型號(hào)： M29DW128F
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述： 128兆位（16Mb的x8或和8Mb x16插槽，多行，頁，引導(dǎo)塊）3V電源，快閃記憶體
文件頁數(shù)： 51/93頁
文件大小： 719K
代理商： M29DW128F
M29DW128F
9 Maximum Rating
51/93
9
Maximum Rating
Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause
permanent damage to the device. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. These are stress ratings only and operation of
the device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Refer also to the STMicroelectronics SURE Program and other
relevant quality documents.
Table 22.
Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Unit
T
BIAS
Temperature Under Bias
–50
125
°C
T
STG
Storage Temperature
–65
150
°C
V
IO
Input or Output Voltage
(1)(2)
1.
Minimum voltage may undershoot to –2V during transition and for less than 20ns during transitions.
2.
Maximum voltage may overshoot to V
CC
+2V during transition and for less than 20ns during transitions.
V
PP
must not remain at 12V for more than a total of 80hrs.
–0.6
V
CC
+0.6
V
V
CC
Supply Voltage
–0.6
4
V
V
CCQ
Input/Output Supply Voltage
–0.6
4
V
V
ID
Identification Voltage
–0.6
13.5
V
V
PP(3)
3.
Program Voltage
–0.6
13.5
V
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