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參數(shù)資料
| 型號(hào)： | M29DW128F70NF1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| 中文描述： | 128兆位（16Mb的x8或和8Mb x16插槽，多行，頁，引導(dǎo)塊）3V電源，快閃記憶體 |
| 文件頁數(shù)： | 16/93頁 |
| 文件大小： | 719K |
| 代理商： | M29DW128F70NF1T |
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2 Signal descriptions
M29DW128F
16/93
Holding RP at V
ID
will temporarily unprotect all the blocks previously protected using a High
Voltage Block Protection technique. Program and erase operations on all blocks will be
possible. The transition from V
IH
to V
ID
must be slower than t
PHPHH
.
2.10 Ready/Busy Output (RB)
The Ready/Busy pin is an open-drain output that can be used to identify when the device is
performing a Program or erase operation. During Program or erase operations Ready/Busy is
Low, V
OL
. Ready/Busy is high-impedance during Read mode, Auto Select mode and Erase
Suspend mode.
After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy
becomes high-impedance. See
Table 30: Reset/Block Temporary Unprotect AC Characteristics
and
Figure 18
and
Figure 19
.
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
2.11 Byte/Word Organization Select (BYTE)
It is used to switch between the x8 and x16 Bus modes of the memory when the M29DW128F
is delivered in TSOP56 package. When Byte/Word Organization Select is Low, V
IL
, the memory
is in x8 mode, when it is High, V
IH
, the memory is in x16 mode.
2.12 V
CCQ
Supply Voltage
V
CCQ
provides the power supply to the I/O and control pins and enables all Outputs to be
powered independently from V
CC
. V
CCQ
can be tied to V
CC
or can use a separate supply.
2.13 V
CC
Supply Voltage (2.7V to 3.6V)
V
CC
provides the power supply for all operations (Read, Program and Erase).
The Command Interface is disabled when the V
CC
Supply Voltage is less than the Lockout
Voltage, V
LKO
. This prevents Bus Write operations from accidentally damaging the data during
power up, power down and power surges. If the Program/Erase Controller is programming or
erasing during this time then the operation aborts and the memory contents being altered will
be invalid.
A 0.1μF capacitor should be connected between the V
CC
Supply Voltage pin and the V
SS
Ground pin to decouple the current surges from the power supply. The PCB track widths must
be sufficient to carry the currents required during Program and erase operations, I
CC2
.
2.14 V
SS
Ground
V
SS
is the reference for all voltage measurements. The device features two V
SS
pins both of
which must be connected to the system ground.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29DW128F70NF6 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F70NF6E | 功能描述:閃存 STD FLASH 128 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29DW128F70NF6F | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F70NF6T | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F70ZA1 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
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