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參數(shù)資料
| 型號(hào)： | M29DW323DT70ZE6E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
| 中文描述： | 32兆位4Mb的x8或功能的2Mb x16插槽，雙行8時(shí)24分，啟動(dòng)塊3V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 1/49頁(yè) |
| 文件大?。?/td> | 818K |
| 代理商： | M29DW323DT70ZE6E |
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1/49
June 2003
M29DW323DT
M29DW323DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
I
SUPPLY VOLTAGE
– V
CC
=
2.7V to 3.6V for Program, Erase and
Read
– V
PP
=12V for Fast Program (optional)
I
ACCESS TIME: 70, 90ns
I
PROGRAMMING TIME
– 10μs per Byte/Word typical
– Double Word/ Quadruple Byte Program
I
MEMORY BLOCKS
– Dual Bank Memory Array: 8Mbit+24Mbit
– Parameter Blocks (Top or Bottom Location)
I
DUAL OPERATIONS
– Read in one bank while Program or Erase in
other
I
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
I
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
I
V
PP
/WP PIN for FAST PROGRAM and WRITE
PROTECT
I
TEMPORARY BLOCK UNPROTECTION
MODE
I
COMMON FLASH INTERFACE
– 64 bit Security Code
I
EXTENDED MEMORY BLOCK
– Extra block used as security block or to store
additional information
I
LOW POWER CONSUMPTION
– Standby and Automatic Standby
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29DW323DT: 225Eh
– Bottom Device Code M29DW323DB: 225Fh
Figure 1. Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA63 (ZA)
7 x 11mm
FBGA
TFBGA48 (ZE)
6 x 8mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29DW323DB70ZE6E | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
| M29DW323DT90ZE6E | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
| M29DW323DT70ZE1E | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
| M29DW323DB70ZE1E | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
| M29DW323DT90ZE1E | 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29DW323DT70ZE6F | 功能描述:閃存 STD FLASH 32 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29DW323DT70ZE6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
| M29DW323DT90N1 | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 48TSOP - Trays |
| M29DW323DT90N1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
| M29DW323DT90N1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory |
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