參數(shù)資料
型號(hào)： M29DW128F60NF6T
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述： 128兆位（16Mb的x8或和8Mb x16插槽，多行，頁，引導(dǎo)塊）3V電源，快閃記憶體
文件頁數(shù)： 79/93頁
文件大?。?/td> 719K
代理商： M29DW128F60NF6T
M29DW128F
12 Part numbering
79/93
Table 38.
Device Geometry Definition
1.
Erase Block Region 1 corresponds to addresses 000000h to 007FFFh; Erase block Region 2 corresponds to addresses
008000h to 3F7FFFh and Erase Block Region 3 corresponds to addresses 3F8000h to 3FFFFFh.
Address
Data
Description
Value
x16
x8
27h
4Eh
0018h
Device Size = 2
n
in number of Bytes
16
MBytes
28h
50h
0001h
TBGA64
(x16 only)
Flash Device Interface Code description
x8, x16
Async.
0002h
TSOP56
(x8/x16)
29h
52h
0000h
Both
Packages
2Ah
54h
0006h
Maximum number of Bytes in Multiple-Byte program or Page= 2
n
64
2Bh
56h
0000h
2Ch
58h
0003h
Number of Erase Block Regions
(1)
. It specifies the number of regions
containing contiguous Erase Blocks of the same size.
3
2Dh
2Eh
5Ah
5Ch
0007h
0000h
Erase Block Region 1 Information
Number of Erase Blocks of identical size = 0007h+1
8
2Fh
30h
5Eh
60h
0020h
0000h
Erase Block Region 1 Information
Block size in Region 1 = 0020h * 256 Byte
8
KBytes
31h
32h
62h
64h
00FDh
0000h
Erase Block Region 2 Information
Number of Erase Blocks of identical size = 00FDh+1
254
33h
34h
66h
68h
0000h
0001h
Erase Block Region 2 Information
Block size in Region 2 = 0100h * 256 Byte
64
KBytes
35h
36h
6Ah
6Ch
0007h
0000h
Erase Block Region 3 information
Number of Erase Blocks of identical size = 0007h + 1
8
37h
38h
6Eh
70h
0020h
0000h
Erase Block Region 3 information
Block size in region 3 = 0020h * 256 Bytes
8
KBytes
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 information
0
相關(guān)PDF資料
PDF描述
M29DW128F60ZA1 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60ZA1E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60ZA1F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60ZA1T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60ZA6 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29DW128F60ZA1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA1E 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA1F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA1T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
M29DW128F60ZA6 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
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