參數(shù)資料
型號: M29DW128F60NF1T
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述: 128兆位(16Mb的x8或和8Mb x16插槽,多行,頁,引導(dǎo)塊)3V電源,快閃記憶體
文件頁數(shù): 90/93頁
文件大小: 719K
代理商: M29DW128F60NF1T
12 Part numbering
M29DW128F
90/93
Figure 27. Write to Buffer and Program Flowchart and Pseudo Code
1.
2.
n+1 is the number of addresses to be programmed.
A Write to Buffer and Program Abort and Reset must be issued to return the device in Read mode.
Write to Buffer F0h
Command,
Block Address
AI08968b
Start
Write Buffer Data,
Start Address
YES
Abort Write
to Buffer
FAIL OR ABORT
(5)
NO
Write n
(1)
,
Block Address
X = 0
Write Next Data,
Program Address Pair
X = X-1
Program Buffer
to Flash Block Address
Read Status Register
(DQ1, DQ5, DQ7) at
Last Loaded Address
YES
DQ7 = Data
NO
Check Status Register
(DQ5, DQ7) at
Last Loaded Address
(3)
NO
YES
Write to a Different
Block Address
Write to Buffer and
Program Aborted
(2)
NO
DQ5 = 1
YES
NO
DQ1 = 1
YES
YES
DQ7 = Data
NO
END
First Part of the
Write to Buffer and Program Command
X=n
相關(guān)PDF資料
PDF描述
M29DW128F60NF6 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
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