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參數(shù)資料
| 型號： | M29DW128F60NF1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
| 中文描述： | 128兆位（16Mb的x8或和8Mb x16插槽，多行，頁，引導(dǎo)塊）3V電源，快閃記憶體 |
| 文件頁數(shù)： | 37/93頁 |
| 文件大?。?/td> | 719K |
| 代理商： | M29DW128F60NF1T |
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M29DW128F
6 Command Interface
37/93
Table 14.
Fast Program Commands, 16-bit Mode
6.3
Block Protection commands
Blocks or groups of blocks can be protected against accidental program, erase or read
operations. The Protection Groups are shown in
Appendix A
,
Table 34: Block Addresses and
Protection Groups
. The device block protection scheme is shown in
Figure 7: Software
Protection Scheme
and
Figure 6: Block Protection State Diagram
. See either
Table 15
, or
Table 16
, depending on the configuration that is being used, for a summary of the Block
Protection commands.
Only the commands related to the Extended Block Protection are available in both 8 bit and 16
bit memory configuration. The other block protection commands are available in 16-bit
configuration only.
6.3.1
Enter Extended Block command
The M29DW128F has one extra 256-Byte block (Extended Block) that can only be accessed
using the Enter Extended Block command.
Three Bus Write cycles are required to issue the Extended Block command. Once the
command has been issued the device enters the Extended Block mode where all Bus Read or
Program operations are conducted on the Extended Block. Once the device is in the Extended
Block mode, the Extended Block is addressed by using the addresses occupied by the boot
blocks in the other operating modes (see
Table 34: Block Addresses and Protection Groups
).
The device remains in Extended Block mode until the Exit Extended Block command is issued
or power is removed from the device. After power-up or a hardware reset, the device reverts to
Command
L
Bus Write Operations
(1)
1.
X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block, BKA Bank Address, WBL Write
Buffer Location. All values in the table are in hexadecimal.
1st
2nd
3rd
4th
5th
6th
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Write to Buffer and Program
N+
5
555
AA
2AA
55
BA
25
BA
N
(2)
2.
The maximum number of cycles in the command sequence is 37. N+1 is the number of Words to be programmed during
the Write to Buffer and Program operation.
PA
(3)
3.
Each buffer has the same A5-A22 addresses. A0-A4 are used to select a Word within the N+1 Word page.
PD
WBL
(4)
4.
The 6th cycle has to be issued N time. WBL scans the Word inside the page.
PD
Write to Buffer and Program Abort and
Reset
3
555
AA
2AA
55
555
F0
Write to Buffer and Program Confirm
1
BA
(5)
5.
BA must be identical to the address loaded during the Write to buffer and Program 3rd and 4th cycles.
29
Double Word Program
3
555
50
PA0
PD0
PA1
PD1
Quadruple Word Program
5
555
56
PA0
PD0
PA1
PD1
PA2
PD2
PA3
PD3
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program
2
X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| M29DW128F60NF6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory |
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| M29DW128F60NF6F | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F60NF6T | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
| M29DW128F60ZA1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory |
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