參數(shù)資料
型號(hào): M29DW128F60NF1E
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述: 128兆位(16Mb的x8或和8Mb x16插槽,多行,頁,引導(dǎo)塊)3V電源,快閃記憶體
文件頁數(shù): 62/93頁
文件大?。?/td> 719K
代理商: M29DW128F60NF1E
10 DC and AC parameters
M29DW128F
62/93
Figure 18. Reset/Block Temporary Unprotect AC Waveforms (No Program/Erase Ongoing)
Figure 19. Reset/Block Temporary Unprotect During Program/Erase Operation AC Waveforms
Table 30.
Reset/Block Temporary Unprotect AC Characteristics
Symbol
Alt
Parameter
M29DW128F
Unit
60
70
t
PLYH(1)
1.
Sampled only, not 100% tested.
t
READY
RP Low to Read mode, during Program or
Erase
Max
20
μs
t
PLPX
t
RP
RP Pulse Width
Min
500
ns
t
PHEL,
t
PHGL(1)
t
RH
RP High to Write Enable Low, Chip Enable
Low, Output Enable Low
Min
50
ns
t
RPD
RP Low to Standby Mode.
Min
20
ns
t
RHEL
t
RHGL(1)
t
RB
RB High to Write Enable Low, Chip Enable
Low, Output Enable Low
Min
0
ns
AI11300b
RB
RP
tPLPX
tPHEL,
tPHGL
E, G
AI11301b
RB
RP
tPLPX
tRHEL, tRHGL
E, G
tPLYH
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M29DW128F60NF1F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
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參數(shù)描述
M29DW128F60NF1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6E 功能描述:閃存 128 Mbit RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29DW128F60NF6F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory