參數(shù)資料
型號(hào)： M29DW128F60NF1E
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
中文描述： 128兆位（16Mb的x8或和8Mb x16插槽，多行，頁，引導(dǎo)塊）3V電源，快閃記憶體
文件頁數(shù)： 49/93頁
文件大?。?/td> 719K
代理商： M29DW128F60NF1E
M29DW128F
8 Dual Operations and Multiple Bank architecture
49/93
8
Dual Operations and Multiple Bank architecture
The Multiple Bank Architecture of the M29DW128F gives greater flexibility for software
developers to split the code and data spaces within the memory array. The Dual Operations
feature simplifies the software management of the device by allowing code to be executed from
one bank while another bank is being programmed or erased.
The Dual Operations feature means that while programming or erasing in one bank, read
operations are possible in another bank with zero latency.
Only one bank at a time is allowed to be in program or erase mode. However, certain
commands can cross bank boundaries, which means that during an operation only the banks
that are not concerned with the cross bank operation are available for dual operations. For
example, if a Block Erase command is issued to erase blocks in both Bank A and Bank B, then
only Banks C or D are available for read operations while the erase is being executed.
If a read operation is required in a bank, which is programming or erasing, the program or erase
operation can be suspended.
Also if the suspended operation was erase then a program command can be issued to another
block, so the device can have one block in Erase Suspend mode, one programming and other
banks in read mode.
By using a combination of these features, read operations are possible at any moment.
Table 20
and
Table 21
show the dual operations possible in other banks and in the same bank.
Note that only the commonly used commands are represented in these tables.
Table 20.
Dual Operations Allowed In Other Banks
Status of bank
Commands allowed in another bank
(1)
1.
If several banks are involved in a program or erase operation, then only the banks that are not concerned with
the operation are available for dual operations.
Read/
Reset
Read
Status
Register
(2)
2.
Read Status Register is not a command. The Status Register can be read during a block program or erase
operation.
Read
CFI
Query
Auto
Select
Program
Erase
Program/
Erase
Suspend
Program
/Erase
Resume
Idle
Yes
Yes
(3)
Yes
Yes
Yes
Yes
Yes
(3)
3.
Only after a program or erase operation in that bank.
Yes
(4)
4.
Only after a Program or Erase Suspend command in that bank.
Programming
Yes
No
No
No
–
–
No
No
Erasing
Yes
No
No
No
–
–
No
No
Program
Suspended
Yes
No
Yes
Yes
No
No
-
Yes
(5)
5.
Only a Program Resume is allowed if the bank was previously in Program Suspend mode.
Erase Suspended
Yes
No
Yes
Yes
Yes
No
-
Yes
(6)
6.
Only an Erase Resume is allowed if the bank was previously in Erase Suspend mode.
相關(guān)PDF資料
PDF描述
M29DW128F60NF1F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF1T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29DW128F60NF1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF6E 功能描述:閃存 128 Mbit RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29DW128F60NF6F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
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