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M28W160ECT, M28W160ECB
Table 5. Read Block Lock Signature
Note: 1. A Locked-Down Block can be locked "DQ0 = 1" or unlocked "DQ0 = 0"; see Block Locking section.
Table 6. Read Protection Register and Lock Register
Table 7. Program, Erase Times and Program/Erase Endurance Cycles
Block Status
E
G
W
A0
A1
A2-A7
A8-A11
A12-A19
DQ0
DQ1
DQ2-DQ15
Locked Block
V
IL
V
IL
V
IH
V
IL
V
IH
0
Don't Care
Block Address
1
0
00h
Unlocked Block
V
IL
V
IL
V
IH
V
IL
V
IH
0
Don't Care
Block Address
0
0
00h
Locked-Down
Block
V
IL
V
IL
V
IH
V
IL
V
0
Don't Care
Block Address
X
(1)
1
00h
Word
E
G
W
A0-A7
A8-A19
DQ0
DQ1
DQ2
DQ3-DQ7 DQ8-DQ15
Lock
V
IL
V
IL
V
IH
80h
Don't Care
0
OTP Prot.
data
Security
prot. data
00h
00h
Unique ID 0
V
IL
V
IL
V
IH
81h
Don't Care
ID data
ID data
ID data
ID data
ID data
Unique ID 1
V
IL
V
IL
V
IH
82h
Don't Care
ID data
ID data
ID data
ID data
ID data
Unique ID 2
V
IL
V
IL
V
IH
83h
Don't Care
ID data
ID data
ID data
ID data
ID data
Unique ID 3
V
IL
V
IL
V
IH
84h
Don't Care
ID data
ID data
ID data
ID data
ID data
OTP 0
V
IL
V
IL
V
IH
85h
Don't Care
OTP data
OTP data
OTP data
OTP data
OTP data
OTP 1
V
IL
V
IL
V
IH
86h
Don't Care
OTP data
OTP data
OTP data
OTP data
OTP data
OTP 2
V
IL
V
IL
V
IH
87h
Don't Care
OTP data
OTP data
OTP data
OTP data
OTP data
OTP 3
V
IL
V
IL
V
IH
88h
Don't Care
OTP data
OTP data
OTP data
OTP data
OTP data
Parameter
Test Conditions
M28W160EC
Unit
Min
Typ
Max
Word Program
V
PP
= V
DD
10
200
μs
Double Word Program
V
PP
= 12V ±5%
10
200
μs
Main Block Program
V
PP
= 12V ±5%
0.16
5
s
V
PP
= V
DD
0.32
5
s
Parameter Block Program
V
PP
= 12V ±5%
0.02
4
s
V
PP
= V
DD
0.04
4
s
Main Block Erase
V
PP
= 12V ±5%
1
10
s
V
PP
= V
DD
1
10
s
Parameter Block Erase
V
PP
= 12V ±5%
0.4
10
s
V
PP
= V
DD
0.4
10
s
Program/Erase Cycles (per Block)
100,000
cycles
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M28W160ECT85N6S | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECB70N6U | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECT85N6U | DC/DC, PCB Mount, Quarter Brick, Input 24VDC, Output 5V 24A, 120W RoHS Compliant: Yes |
| M28W160ECB85N6U | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28W160ECT85N6S | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECT85N6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECT85N6U | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECT85ZB1 | 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECT85ZB1E | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
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