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參數(shù)資料
| 型號(hào)： | M28W160ECT85N6F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 16兆位（1兆x16插槽，引導(dǎo)塊）3V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 36/50頁(yè) |
| 文件大?。?/td> | 860K |
| 代理商： | M28W160ECT85N6F |
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M28W160ECT, M28W160ECB
36/50
Table 27. CFI Query System Interface Information
Offset
Data
Description
Value
1Bh
0027h
V
DD
Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
2.7V
1Ch
0036h
V
DD
Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
3.6V
1Dh
00B4h
V
PP
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
11.4V
1Eh
00C6h
V
PP
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
12.6V
1Fh
0004h
Typical time-out per single word program = 2
n
μs
16μs
20h
0004h
Typical time-out for Double Word Program = 2
n
μs
16μs
21h
000Ah
Typical time-out per individual block erase = 2
n
ms
1s
22h
0000h
Typical time-out for full chip erase = 2
n
ms
NA
23h
0005h
Maximum time-out for word program = 2
n
times typical
512μs
24h
0005h
Maximum time-out for Double Word Program = 2
n
times typical
512μs
25h
0003h
Maximum time-out per individual block erase = 2
n
times typical
8s
26h
0000h
Maximum time-out for chip erase = 2
n
times typical
NA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M28W160ECT85N6S | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECB70N6U | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECT85N6U | DC/DC, PCB Mount, Quarter Brick, Input 24VDC, Output 5V 24A, 120W RoHS Compliant: Yes |
| M28W160ECB85N6U | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECT100N6U | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28W160ECT85N6S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECT85N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECT85N6U | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECT85ZB1 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECT85ZB1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
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